一种低温漂低功耗的带隙基准电压源设计  

Design of a bandgap reference voltage source with low temperature drift power

作　　者：张涛[1] 刘逸冬 刘劲[1] ZHANG Tao;LIU Yidong;LIU Jin(School of Information Science and Engineering,Wuhan University of Science and Technology,Wuhan 430081,China)

机构地区：[1]武汉科技大学信息科学与工程学院,湖北武汉430081

出　　处：《电子元件与材料》2024年第5期617-624,共8页Electronic Components And Materials

基　　金：国家自然科学基金(61873196)。

摘　　要：为了提高DC-DC转换器的性能,提出了一种电压带隙基准。通过调节参数抵消掉两路电流的一阶温度项,得到了只具有常数项和高阶温度项的电流,从而在输出电阻上转化为电压补偿三极管的高阶温度项,进而使得带隙具有较低的温度系数。之后在输出端加上RC滤波器,使得高频段的电源抑制比得到提升。同时为了探索带隙在低功耗下的工作特性,几乎将所有MOS管置于亚阈值区,达到降低静态电流的效果。基于TSMC 0.18μm CMOS工艺完成了电路的设计与仿真,结果表明,在1.8 V的电源电压下,带隙输出为1.256 V;在-40~140℃的变化范围内,温度系数为6.3×10^(-6)℃^(-1);通过增加RC滤波器,高频电源抑制比为-65 dB@10 MHz;而且整个带隙的静态电流仅有6.2μA。To enhance the performance of DC-DC converters,a voltage bandgap reference was proposed.The first-order temperature dependence of the current in two sides were offset by adjusting parameters,resulting in current with only a constant term and high-order temperature dependent terms.As a result,the output resistance is compensated by the highorder temperature dependent terms of the transistor,which yields a lower temperature coefficient of the bandgap.An RC filter was added at the output to enhance the power supply rejection ratio in the high-frequency range.Additionally,almost all MOS transistors were placed in the subthreshold region to explore the characteristics of the bandgap at low power consumption and achieve a reduction in static current.The circuit design and simulation were completed based on the TSMC 0.18μm CMOS process.The results show that the bandgap output is 1.256 V at a supply voltage of 1.8 V.From-40℃to 140℃,the temperature coefficient is 6.3×10^(-6)℃^(-1).By adding an RC filter,the power supply rejection ratio is-65 dB@10 MHz at high frequency.Moreover,the static current of the entire bandgap is only 6.2μA.

关 键 词：带隙基准 温度补偿 亚阈值 温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]