GaN/金刚石复合结构的制备与器件性能  

Preparation and Device Performance of GaN/Diamond Composite Structure

作　　者：刘莎莎 兰飞飞[1] 房诗舒 程红娟[1] 王英民 Liu Shasha;Lan Feifei;Fang Shishu;Cheng Hongjuan;Wang Yingmin(The 46^(th)Research Institute,CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2024年第7期618-623,共6页Semiconductor Technology

摘　　要：金刚石是一种极具竞争力的新型热沉衬底材料,可以显著提升GaN器件的输出功率密度。基于GaN上直接生长金刚石技术,研制了高导热GaN/金刚石复合衬底。采用聚合物辅助播种与两步法生长金刚石相结合的方法,实现了通过直接生长技术制备GaN/金刚石复合结构。通过引入大流量氢气生长模式,并对界面热阻进行优化,成功制备了高质量的GaN/金刚石复合结构。基于GaN/金刚石复合结构进行了器件验证,结果表明,与SiC基GaN器件相比,金刚石基GaN器件的输出功率密度由2.90 W/mm提升至3.96 W/mm。Diamond is a very competitive new heat sink substrate material that can significantly en-hance the output power density of GaN devices.The GaN/diamond composite substrate with high thermal conductivity was developed based on the direct growth technology of diamond on GaN.The direct growth technology of GaN/diamond composite structure was realized by using the combination method of polymer assisted sowing and two-step diamond growth.The high-quality GaN/diamond composite structure was successfully prepared by introducing high-flow hydrogen growth mode and optimizing the interfacial thermal resistance.Device verification was conducted based on the GaN/diamond composite structure,and the results show that the output power density of diamond-based GaN devices increases from 2.90 W/mm to 3.96 W/mm compared with SiC-based GaN devices.

关 键 词：金刚石 GAN 散热能力 功率密度 界面热阻 

分 类 号：TN304.055[电子电信—物理电子学] TN386.6