一种纳秒级半导体激光器集成微模块  

A Nanosecond Semiconductor Laser Integrated Micromodule

作　　者：李军建 赵永瑞 师翔[1,2,3] 贾东东 高业腾 赵光璞 贾凯烨 Li Junjian;Zhao Yongru;Shi Xiang;Jia Dongdong;Gao Yeteng;Zhao Guangpu;Jia Kaiye(North-China Integrated Circuit Co.,Ltd.,Shjiazhuang 050200,China;Key Laboratory of Radio Frequency Integrated Circuit for Mobile Communication in Hebei Province,Shijiazhuang 050200,China;The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]河北新华北集成电路有限公司,石家庄050200 [2]河北省移动通信用射频集成电路重点实验室,石家庄050200 [3]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2024年第7期635-641,共7页Semiconductor Technology

摘　　要：为提升半导体激光器在高重频下工作的稳定性,并满足模块高集成度的需求,研制了一款纳秒级半导体激光器集成微模块。该微模块包括半导体激光器芯片、装载激光器芯片的基板以及驱动电路。在基板侧面设计金属化过孔,将半导体激光器芯片的电极从基板侧面引出,实现了激光的垂直发射;采用球栅阵列(BGA)封装GaN HEMT和GaN驱动器,优化电路布局和半导体激光器的回流路径,减小寄生电感,实现了1 ns的发光脉冲宽度,工作重频达到了1 MHz;同时,发光脉冲信号的前沿抖动度小于60 ps,脉冲宽度抖动度小于200 ps,表明其具有较高的稳定性。最后,采用高透明、耐高温的灌封胶对该微模块实现集成化封装,整体尺寸仅为6mm×5mm×2.6mm。In order to improve the stability of semiconductor laser operating at high repetition frequency and meet the requirements for high integration of the module,a nanosecond semiconductor laser integrated micromodule was developed.The micromodule includes a semiconductor laser chip,a board for loading the laser chip and a driving circuit.By designing metalized vias on the side of the board,the elec-trodes of the semiconductor laser chip were drawn out from the side of the board,achieving vertical emis-sion of the laser.By using ball grid array(BGA)packaged GaN HEMT and GaN driver,the layout and reflux path of the semiconductor laser were optimized,parasitic inductance was reduced and 1 ns light pulse width was achieved with a working repetition frequency of 1 MHz.Meanwhile,the front edge jitter of the light pulse signal is less than 60 ps,and the pulse width jitter is less than 200 ps,indicating high stability of the micromodule.Finally,the micromodule is integrated and packaged using highly transparent and high-temperature resistant sealing adhesive,and the overall size is only 6mm×5mm×2.6mm.

关 键 词：半导体激光器 集成封装 垂直发射 GaN驱动器 窄脉冲 

分 类 号：TN248.4[电子电信—物理电子学]