InSb-In共晶体磁阻薄膜的制备及特性分析  

Preparation and Characteristic Analysis of InSb-In Eutectic Magnetoresistance Film

作　　者：李锋[1] Li Feng(Laiwu Vocational and Technical College,Jinan 250000,China)

机构地区：[1]莱芜职业技术学院,济南250000

出　　处：《黑龙江科学》2024年第12期90-93,共4页Heilongjiang Science

摘　　要：利用纯度为99.99%的铟和锑单质为原料,采用真空蒸发法,制备了InSb-In共晶体磁阻薄膜,对薄膜进行热处理。通过实验对锑化铟薄膜的物相构成、表面形貌进行分析,探讨成膜条件、退火条件等因素对薄膜结构及性能的影响。结果表明,InSb薄膜是InSb和In的共晶体。InSb-In eutectic magnetoresistance film is prepared by vacuum evaporation method from 99.99%indium and antimony,and the film is then subiected to heat treatment.The study analyzes the phase composition and the surface modalit of the film,investigates the effects of film-forming and annealing conditions to the microstructure.The results show that the film is the ertectic of In and InSb.

关 键 词：INSB薄膜 真空蒸发 热处理 灵敏度 

分 类 号：TN305.8[电子电信—物理电子学]