MoS_(2)单晶薄膜的制备及生长机制研究  

Research on the preparation and growth mechanism of MoS_(2) single crystal films

作　　者：钟浩然 王宇裘 王丁[1] ZHONG Haoran;WANG Yuqiu;WANG Ding(School of Materials and Chemistry,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学材料与化学学院,上海200093

出　　处：《有色金属材料与工程》2024年第3期46-54,共9页Nonferrous Metal Materials and Engineering

基　　金：上海市自然科学基金面上项目(19ZR1435200)。

摘　　要：通过研究二维MoS_(2)薄膜的制备工艺参数以及生长规律,为过渡金属硫化物薄膜的制备工艺提供技术经验。采用化学气相沉积法,以MoO3和S粉为前驱体,通过调控载气流速、保温时间和MoO_(3)的质量,制备一系列MoS_(2)薄膜。利用光学显微镜、拉曼光谱仪、光致发光光谱仪、原子力显微镜等测试设备对MoS_(2)薄膜的层数和结构进行表征;分析了工艺参数对MoS_(2)薄膜的影响,探索了中心成核的生长机制。结果表明,在载气流速为110 mL/min、保温时间为10 min、MoO_(3)的质量为2.5 mg的条件下,得到的MoS_(2)薄膜最优。同一衬底上存在不同厚度的连续的MoS_(2)薄膜。通过控制前驱体的比例和适当的工艺参数可以制备长度为100μm甚至更大尺寸的单层MoS_(2)薄膜。The process parameters and growth law of two-dimensional MoS_(2)films were studied to provide technical experience for the synthesis process of transition metal sulfide thin films.Using chemical vapor deposition method with MoO_(3) and S powders as precursors,a series of MoS_(2)thin films were prepared by adjusting the carrier gas flow rate,holding time,and MoO_(3) mass.The layer number and structure of MoS_(2)films were characterized by optical microscopy,Raman spectroscopy,photoluminescence spectroscopy,atomic force microscopy,and other test devices.The effects of process parameters on MoS_(2)thin films were studied,and the growing mechanism of core nucleation were explored.The results show that the optimal MoS_(2)films are obtained under the conditions including a carrier gas flow rate of 110 mL/min,holding time of 10 min,and MoO_(3) mass of 2.5 mg.There are continuous MoS_(2)thin films with different thicknesses on the same substrate.Monolayer MoS_(2)films with length of 100μm or more can be prepared by controlling the ratio of precursors and appropriate process parameters.

关 键 词：二维材料 MoS_(2)薄膜 化学气相沉积 拉曼光谱 

分 类 号：TQ136.12[化学工程—无机化工]