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作 者:周晓雨 彭鸿雁[1] 邵铭 程相正 谭勇[3] ZHOU Xiaoyu;PENG Hongyan;SHAO Ming;CHENG Xiangzheng;TAN Yong(School of Physics and Electronic Engineering,Hainan Normal University,Haikou 571158;Key Laboratory of Optoelectronic Countermeasures Testing and Evaluation Technology,Luoyang 471003;School of Physics,Changchun University of Technology,Changchun 130022)
机构地区:[1]海南师范大学物理与电子工程学院,海口571158 [2]光电对抗测试评估技术重点实验室,洛阳471003 [3]长春理工大学物理学院,长春130022
出 处:《长春理工大学学报(自然科学版)》2024年第3期23-28,共6页Journal of Changchun University of Science and Technology(Natural Science Edition)
基 金:吉林省自然科学基金(YDZJ202201ZYTS510)。
摘 要:纳米硅的研究是目前发光领域中非常活跃的方向。其发光性能可改进目前的硅基发光器件的性能,实现硅基光源集成,有利于突破其发光效率低的技术瓶颈。通过分别控制空气和氧退火氛围、不同的退火时间,采用纳秒脉冲激光制备蜂窝状纳米单晶硅阵列的腔体结构,分别获得对应纳米硅表面Si-O-Si局域态630 nm光致发光源和对应Si=O的局域态710 nm光致发光源。为了进一步解释这种现象,提出一种局域态与量子限制效应相互竞争导致硅材质表面形成类三能级结构的模型,该类三能级结构可在控制不同退火氛围和不同退火时间的机制下,受到光激励而形成可调制特征发光源。The research on nano-silicon is currently a very active direction in the field of luminescence.Its luminescent properties can improve the performance of silicon-based light-emitting devices,achieve integrated silicon-based lighting sources,and break through the technical bottleneck of low light efficiency in future.This paper uses nanosecond pulsed lasers to prepare a cavity structure of honeycomb-shaped monocrystalline silicon arrays by controlling different annealing atmospheres(air and oxygen)and annealing times,obtaining corresponding Si-O-Si local states at 630 nm and Si=O local states at 710 nm photoluminescence sources,respectively.To further explain this phenomenon,a model is proposed that localized states compete with quantum confinement effects that induces the formation of a quasi-three-level structure on the surface of silicon materials.This quasi-three-level structure can be stimulated by light under controlled annealing atmospheres and annealing times to form a modulated characteristic light-emitting source.
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