钨镍共掺杂V_(2)O_(5)薄膜的光电特性研究  

Preparation of tungsten-nickel co-doped V_(2)O_(5) films by sol-gel method and photoelectric properties of thermally induced phase transition

作　　者：王兴萍 李毅[1,2] 庄嘉庆 闫俊屹 梅金城 WANG Xingping;LI Yi;ZHUANG Jiaqing;YAN Junyi;MEI Jincheng(School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;Shanghai Key Laboratory of Modern Optical Systems,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093 [2]上海理工大学上海市现代光学系统重点实验室,上海200093

出　　处：《光学仪器》2024年第3期65-72,共8页Optical Instruments

基　　金：教育部科学技术研究重点项目(207033);上海市科学技术委员会科技攻关计划(06DZ11415);上海市教育委员会科研创新计划重点项目(10ZZ94);上海市领军人才培养计划(2011-026)。

摘　　要：利用溶胶–凝胶旋涂法和后退火工艺在FTO导电玻璃上制备了钨镍共掺杂V_(2)O_(5)薄膜,研究了薄膜在不同温度和不同偏压下的光电特性和相变特性。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱仪(XPS)测试了钨镍共掺杂V_(2)O_(5)薄膜的晶体结构、表面形貌和组分,分析了不同钨镍共掺杂浓度对V_(2)O_(5)薄膜相变光电特性的影响。结果表明,当钨和镍的掺杂质量分数分别为3%和1.5%时,钨镍共掺杂的V_(2)O_(5)薄膜的相变温度为218.5℃,在可见光范围内有较高的透过率,在近红外1310 nm波长处的光学透过率达48.83%,与未掺杂V_(2)O_(5)薄膜的光学透过率相比提高了10.29%,薄膜电阻降低了30.53%,热致回线宽度收窄为15℃,说明钨镍共掺杂的V_(2)O_(5)薄膜具有良好的可逆相变光电特性,有望在新型光电器件领域得到较好的应用。In this paper,tungsten-nickel co-doped V_(2)O_(5) films were prepared on FTO conductive glass by using sol-gel spin coating and annealing to study their photoelectric and phase transition properties at different temperatures and different bias voltage.The crystal structure,surface morphology and components of tungsten-nickel co-doping V_(2)O_(5) films were tested by XRD,SEM and XPS to analyze the effects of different tungsten-nickel co-doping concentrations on the phase transition photoelectric properties of V_(2)O_(5) films.The results show that when the doping concentrations of tungsten and nickel were respectively 3%and 1.5%,tungsten-nickel co-doped V_(2)O_(5) films had a phase transition temperature of 218.5℃,a higher transmittance in the visible light range and the transmittance of 48.83%at 1310 nm wavelength.Comparing with the undoped V_(2)O_(5) films,the optical transmittance and sheet resistance of the co-doped V_(2)O_(5) films increased 10.29%and decreased 30.53%,respectively,and the thermal hysteresis loop width was also narrowed to 15℃.It is expected to have better applications in the field of new optoelectronic devices based on their excellent reversible phase transition photoelectric properties.

关 键 词：钨镍共掺杂 V_(2)O_(5)薄膜 溶胶–凝胶 热致相变 光学透过率 薄膜电阻 

分 类 号：O484.4[理学—固体物理] O484.5[理学—物理]