一种低成本高精度欠压保护电路  

A low-cost high-precision undervoltage protection circuit

作　　者：张睿宸 隋继超 贺章擎[3] 万美琳 ZHANG Ruichen;SUI Jichao;HE Zhangqing;WAN Meilin(School of Computer Science and Information Engineering,Hubei University,Wuhan 430062,China;School of Microelectronic,Hubei University,Wuhan 430062,China;School of Electrical and Electronic Engineering,Hubei University of Technology,Wuhan 430068,China)

机构地区：[1]湖北大学计算机与信息工程学院,湖北武汉430062 [2]湖北大学微电子学院,湖北武汉430062 [3]湖北工业大学电气与电子工程学院,湖北武汉430068

出　　处：《微电子学与计算机》2024年第7期74-80,共7页Microelectronics & Computer

基　　金：国家自然科学基金(62174050);中国工程科技发展战略研究湖北研究院咨询研究(HB2022B06)。

摘　　要：提出了一种低成本、高精度欠压保护电路。采用负反馈电路将电源采样电压、带隙基准负温度系数电压和带隙基准正温度系数电压分散于两条不同的支路中;通过对电阻比例进行合理的设计,两条支路的输出电压差能够同时包含电源的采样电压和精准的带隙基准电压。在采用比较器对该两条支路输出电压差进行比较后,等效实现了对电源采样电压和基准电压的比较。所提电路结构简单,避免使用了启动电路、偏置电路等辅助电路,精准地实现电源电压与基准电压的比较,同时实现了高精度和低成本。基于HHGRACE 0.11μm工艺对上述欠压保护电路进行了设计和版图实现。后仿真结果显示,当电源电压正常为3.60 V,欠压保护点下降阈值设计为2.44 V,上升阈值设计为2.50 V时,在不同工艺角情况下,温度范围为-40℃~125℃时,欠压点最大偏差为120 mV(6σ),功耗为21μW,整个电路的面积为18000μm^(2)。A low cost and high precision undervoltage protection circuit is proposed.The power supply sampling voltage,the negative to the absolute temperature voltage,and the positive to the absolute temperature voltage are dispersed in two different branches using a negative feedback circuit.By reasonably designing the resistance ratio,the output voltage difference of the two branches can simultaneously contain both the power supply sampling voltage and the precise bandgap reference voltage.After comparing the output voltage difference of the two branches using a comparator,the comparison between the power supply sampling voltage and the reference voltage is effectively realized.The circuit has a simple structure and avoids the use of auxiliary circuits such as start-up and bias circuits,accurately realizing the comparison between the power supply voltage and the reference voltage while achieving high precision and low cost.Based on the HHGRACE 0.11μm process,the undervoltage protection circuit is designed and implemented.The post-simulation results show that when the power supply voltage is normal at 3.60 V and the rising and falling thundervoltage protection point is designed to be 2.50 V and 2.45 V respectively,under different process corners and temperature ranges of−40℃to 125℃,the maximum deviation of the undervoltage point was 120 mV(6σ),the power consumption is 21μW,and the total circuit area is 18000μm^(2).

关 键 词：欠压保护 带隙基准 CMOS工艺 低成本 高精度 

分 类 号：TN432[电子电信—微电子学与固体电子学]