石英玻璃刻蚀浅锥孔阵列的工艺研究  

Process of Etching Shallow Tapered-Hole Arrays in Quartz Glass

作　　者：乌李瑛 刘丹 权雪玲 程秀兰 张芷齐 高庆学 付学成[1] 徐丽萍 张文昊 马玲 WU Liying;LIU Dan;QUAN Xueling;CHENG Xiulan;ZHANG Zhiqi;GAO Qingxue;FU Xuecheng;XU Liping;ZHANG Wenhao;MA Ling(Center for Advanced Electronic Materials and Devices,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,CHN;Laboratory of Medical Laboratory Technology,Suzhou Institute of Biomedical Engineering,Chinese Academy of Sciences,Suzhou 215163,CHN)

机构地区：[1]上海交通大学电子信息与电气工程学院先进电子材料与器件平台,上海200240 [2]中国科学院苏州生物医学工程技术研究所医学检验技术研究室,江苏苏州215163

出　　处：《半导体光电》2024年第3期434-441,共8页Semiconductor Optoelectronics

基　　金：上海市科技创新行动项目;国家自然科学基金重点项目(62335014);上海交通大学平湖智能光电研究所开放基金(22H010102520);国家科技部“十四五”重点研发计划“高性能免疫现场检测系统研发”项目(2023YFC2413001);2023年上海交通大学决策咨询重点课题项目(JCZXSJA2023-05).

摘　　要：介绍了石英玻璃刻蚀浅锥孔的制备方法。通过紫外接触式光刻系统在石英玻璃上形成光刻胶浅锥孔阵列图案,用电感耦合反应离子刻蚀机(ICP-RIE)进行刻蚀。研究了光刻参数和蚀刻参数(气体流量、气体成分、腔压、ICP功率和偏置功率)对石英玻璃的刻蚀性能、表面轮廓、蚀刻速率和侧壁倾角的影响。结果表明:刻蚀气体种类对石英浅锥孔阵列刻蚀效果有显著影响,CF_(4)和Ar的组合气体所刻蚀的石英锥孔阵列的效果最佳,随着CF_(4)气体流量比的增加,石英刻蚀倾角先降低后又小幅增加,当刻蚀气体(CF_(4)∶Ar)流量比在5∶3时,石英刻蚀速率为0.154μm/min,光刻胶刻蚀速率为0.12μm/min,得到的石英浅锥孔倾角最倾斜。在其他刻蚀参数一定的情况下,ICP功率由600W升高至800W,石英刻蚀速率大幅降低,聚合物的沉积成为刻蚀工艺的主导;刻蚀石英的粗糙度Rq随着ICP功率的降低明显增加;RF功率升高时刻蚀石英的速率增加,Rq值增加后又降低,当RF功率升高至200W时,光刻胶发生碳化现象。可为石英玻璃微器件的制备提供工艺参考。We herein introduce a method for preparing shallow-tapered holes etched on quartz glass.The effects of lithographic and etching parameters(gas flow,gas composition,cavity pressure,ICP power,and bias power)on the etching properties,surface profile,etching rate,and sidewall inclination of quartz glass were investigated.The results showed that the type of etching gas significantly affected the etching of the shallow cone-hole array on quartz and that the combination of CF_(4)and Ar yielded the best etching effect.As the CF_(4)gas flow rate increased,the quartz etching angle first decreased and then increased slightly.When the CF_(4)∶Ar gas flow ratio was 5∶3,the quartz etching rate was 0.154μm/min,the photoresist etching rate was 0.12μm/min,and the inclination of the shallow quartz cone hole was the highest.When other etching parameters were applied,the ICP power increased from 600 to 800W,the quartz etching rate decreased significantly,and polymer deposition became the dominant etching process.The roughness(Rq)of the etched quartz increased with decreasing ICP power.As the RF power increased,the rate of quartz etching increased,and the Rq value of the etched quartz first increased and then decreased.When the RF power was increased to 200 W,photoresist carbonization occurred.This study provides a technical reference for the preparation of quartzglass microdevices.

关 键 词：电感耦合反应离子刻蚀 石英玻璃 干法刻蚀 等离子体 刻蚀倾角 微透镜阵列 锥孔 

分 类 号：TB43[一般工业技术]