前段结构对全隔离CMOS图像传感器性能的影响分析  

Analysis of the Influence of Front Structure on the Performance of Fully Isolated CMOS Image Sensors

作　　者：王文轩 WANG Wenxuan(SmartSens(Shanghai)Technology Co.,Ltd.,Shanghai,200233,China)

机构地区：[1]思特威(上海)电子科技股份有限公司,上海200233

出　　处：《集成电路应用》2024年第5期10-12,共3页Application of IC

摘　　要：阐述全隔离图像传感器前段不同的金属接触孔结构、多晶硅结构对传感器光学以及电学性能的影响。实验结果表明,在像素隔离区域设置金属接触孔结构,或者同时设置金属接触孔与多晶硅结构,可以提升传感器红外光波段抗串扰能力,并且金属接触孔与多晶硅组合的隔离结构还可以改善传感器电学高温性能。This paper describes the effects of different metal contact hole structures and polycrystalline silicon structures in the front section of fully isolated image sensors on their optical and electrical performance.The experimental results show that setting a metal contact hole structure in the pixel isolation area,or simultaneously setting a metal contact hole and a polycrystalline silicon structure,can improve the infrared light band anti-interference ability of the sensor.Moreover,the isolation structure combining the metal contact hole and polycrystalline silicon can also improve the electrical high-temperature performance of the sensor.

关 键 词：全隔离CMOS图像传感器 金属接触孔结构 多晶硅结构 

分 类 号：TN386[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]