AlGaN基深紫外LED的可靠性研究及寿命预测  

Reliability Study and Lifetime Prediction of AlGaN-based Deep Ultraviolet LED

作　　者：宫明峰 孙雪娇[2] 雷程[1] 梁庭[1] 李丰超 谢宇 李开心 刘乃鑫[2,3] GONG Mingfeng;SUN Xuejiao;LEI Cheng;LIANG Ting;LI Fengchao;XIE Yu;LI Kaixin;LIU Naixin(State Key Laboratory of Dynamic Measurement Technology,North University of China,Taiyuan Shanxi 030051,CHN;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,CHN;Shanxi Zhongke Lu'an Ultraviolet Optoelectronics Technology Co.Ltd,Changzhi Shanxi 046000,CHN)

机构地区：[1]中北大学省部共建动态测试技术国家重点实验室,太原030051 [2]中国科学院半导体研究所,北京100083 [3]山西中科潞安紫外光电科技有限公司,山西长治046000

出　　处：《光电子技术》2024年第2期106-115,共10页Optoelectronic Technology

基　　金：国家重点研发计划(2022YFB3604804);山西省重点研发项目(202102030201007)。

摘　　要：围绕AlGaN基深紫外LED的外延生长、工艺制备等因素对深紫外LED可靠性的影响以及加速寿命预测等方面开展了系统的研究。探索了量子垒(Quantum Barrier,简称QB)中Al组分、电子阻挡层(Electron Barrier Layer,简称EBL)中Al组分、同尺寸芯片不同台面面积等因素对深紫外LED可靠性的影响,确定QB结构Al组分为74%,EBL结构Al组分为75%,台面面积为P68。对优化后的深紫外LED设计了热、电应力老化试验,结合阿伦纽斯模型、逆幂律模型、指数最小二乘拟合对深紫外LED的寿命进行预测。实验结果表明,随着电、热应力的增加,深紫外LED可靠性随之降低,阿伦纽斯模型预测寿命为5027 h,逆幂律模型预测寿命为5400 h,正常工作电流40 mA下,深紫外LED实际寿命为5582 h,逆幂律模型预测精度较阿伦纽斯模型提升了6.7%。本研究将为提高深紫外LED的可靠性和产品应用普及提供坚实的理论基础。In this study,a systematic study was carried out on the influence of epitaxial growth and chip preparation process on the reliability and accelerated lifetime prediction of AlGaN-based deep ultraviolet LEDs.The impact of Al component in Quantum Barrier(QB),Al component in Electron Barrier Layer(EBL),and different table areas of the same size chip on the reliability of deep ultraviolet LED were explored.The Al fraction was determined to be 74% for the QB structure and 75% for the EBL structure with a table area of P68.Thermal and electrical stress aging tests were designed for the optimised deep-ultraviolet LEDs,and the lifetime of the deep-ultraviolet LEDs was predicted by combining the Arrhenius model,the inverse power-law model,and the exponential least-squares fitting.The experimental results showed that with the increase of electrical and thermal stress,the reliability of deep-ultraviolet LEDs decreased,the Arrhenius model predicted the lifetime of 5027 hours,the inverse power law model predicted the lifetime of 5400 hours,and the actual lifetime of the deepultraviolet LEDs under the normal operating current of 40 mA was 5582 hours,and the predictive accuracy of the inverse power law model was improved by 6.7% over the Arrhenius model.By shedding light on these crucial factors influencing the reliability of deep ultraviolet LEDs,the study laid a robust theoretical groundwork.This groundwork would not only facilitate further exploration into reliability enhancement,but also pave the way for widespread application and adoption of deep ultraviolet LEDs in various industries.

关 键 词：ALGAN 深紫外发光二极管 可靠性 寿命预测 

分 类 号：TN312.8[电子电信—物理电子学]