n-nc-Si:H低温制备工艺及其在柔性钙钛矿太阳电池中的应用  

Low Temperature Preparation Process of N-nc-Si:H and Its Application in Flexible Perovskite Solar Cells

作　　者：靳果[1] 王记昌[1] 闫奇 JIN Guo;WANG Jichang;YAN Qi(Henan Polytechnic Institute,Nanyang 473000,China;State Grid Nanyang Power Supply Company,Nan-yang 473000,China)

机构地区：[1]河南工业职业技术学院,河南南阳473000 [2]国网南阳供电公司,河南南阳473000

出　　处：《河南科技》2024年第9期83-87,共5页Henan Science and Technology

基　　金：河南省科技攻关项目(242102241024);河南省科技攻关项目(232102240031)。

摘　　要：【目的】为在低温工艺下制备出适用于柔性钙钛矿太阳电池的高性能电子传输层,需要对电子传输层材料及制备条件进行研究。【方法】将n型氢化纳米晶硅薄膜作为柔性钙钛矿太阳电池电子传输层,研究衬底温度对薄膜性能的影响,并优化电子传输层与钙钛矿层界面处理工艺和结构。【结果】得到暗电导率、光透过率、表面形貌适用于柔性钙钛矿太阳电池电子传输层的n型氢化纳米晶硅薄膜低温制备条件,经过界面优化处理的柔性钙钛矿太阳电池转换效率达到14.66%。【结论】在低温工艺下制备出了高性能的电子传输层及柔性钙钛矿太阳电池,对进一步开展叠层钙钛矿太阳电池的研究具有指导意义。[Purposes]In order to prepare a high-performance electron transport layer suitable for flexible perovskite solar cells under low-temperature technology,it is necessary to study the materials and prepa⁃ration conditions of the electron transport layer.[Methods]The effect of substrate temperature on the per⁃formance of the n-type hydrogenated nanocrystalline silicon thin film which was used as the flexible perovskite solar cell electron transport layer was studied,and the interface treatment process and struc⁃ture between the electron transport layer and the perovskite layer were optimized.[Findings]The lowtemperature preparation conditions for n-type hydrogenated nanocrystalline silicon thin films suitable for the electronic transport layer of flexible perovskite solar cells were obtained,including dark conductivity,light transmittance,and surface morphology.With interface optimization,the conversion efficiency of the flexible perovskite solar cell reached 14.66%.[Conclusions]The preparation of high-performance elec⁃tron transport layers and flexible perovskite solar cells under low-temperature technology were obtained,which has guidance significance for further research on stacked perovskite solar cells.

关 键 词：柔性钙钛矿太阳电池 n-nc-Si:H 衬底温度 薄膜性能 界面优化 

分 类 号：TM914[电气工程—电力电子与电力传动]