一种低功耗高稳定性的LDO设计  

Design of a low power and high stability LDO

作　　者：谢海情[1,2] 曹武 崔凯月 赵欣领 刘顺城 XIE Haiqing;CAO Wu;CUI Kaiyue;ZHAO Xining;LIU Shuncheng(School of Physics and Electronic Science,Changsha University of Science and Technology,Changsha 410114,China;Hunan Provincial Key Laboratory of Genetic Engineering of Flexible Electronic Materials,Changsha University of Science and Technology,Changsha 410114,China)

机构地区：[1]长沙理工大学物理与电子科学学院,湖南长沙410114 [2]长沙理工大学柔性电子材料基因工程湖南省重点实验室,湖南长沙410114

出　　处：《电子设计工程》2024年第14期115-120,共6页Electronic Design Engineering

基　　金：湖南省自然科学基金(2021JJ30739);长沙市科技计划重点项目(kq1901102);湖南省教育厅科学研究项目(20K007)。

摘　　要：基于Nuvoton 0.35μm CMOS工艺,设计了一种低功耗、高稳定性、高瞬态响应的无片外电容低压差线性稳压器(LDO)。误差放大器为交叉耦合结构,通过调节耦合对的比例可在低电流下获得相对大带宽和高增益,从而保证系统稳定性。电路基于自适应偏置结构,动态跟随负载电流变化,为前级误差放大器提供偏置电流,提高环路带宽进而提高LDO的瞬态响应。仿真结果表明,LDO的输入范围为1.3~3.3 V,输出电压稳定在1.2 V,压差仅为100 mV;全负载范围内相位裕度(PM)最差为64.4°;负载电流在0.1μA~20 mA跳变时,欠冲电压为71.52 mV、恢复时间为526 ns,过冲电压为90.217 mV、恢复时间为568 ns,最小静态电流为5.17μA。A capacitorless Low-Dropout regulator(LDO)with low power consumption,high stability and high transient response is designed based on Nuvoton 0.35μm CMOS process.The error amplifier is a cross-coupled structure.By adjusting the ratio of the coupling pairs,a relatively large bandwidth and high gain can be obtained at low current,thereby ensuring system stability.Based on the adaptive bias structure,the circuit dynamically follows the load current change to provide the bias current for the pre-stage error amplifier,which improves the loop bandwidth and the transient response of the LDO.The simulation results show that the input range of LDO is 1.3~3.3 V,the output voltage is stable at 1.2 V,and the dropout voltage is only 100 mV.The worst Phase Margin(PM)in the full load range is 64.4°.When the load current jumps from 0.1μA to 20 mA,the undershoot voltage and recovery time are 71.52 mV and 526 ns,;the overshoot voltage and recovery time are 90.217 mV and 568 ns.The minimum quiescent current is 5.17μA.

关 键 词：低压差线性稳压器(LDO) 无片外电容 低功耗 瞬态响应 

分 类 号：TN492[电子电信—微电子学与固体电子学]