Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer  

作　　者：Bosen Liu Guohao Yu Huimin Jia Jingyuan Zhu Jiaan Zhou Yu Li Bingliang Zhang Zhongkai Du Bohan Guo Lu Wang Qizhi Huang Leifeng Jiang Zhongming Zeng Zhipeng Wei Baoshun Zhang 

机构地区：[1]State Key Laboratory of High-Power Semiconductor Laser,School of Physics,Changchun University of Science and Technology,Changchun 130022,China [2]Nanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]Suzhou Powerhouse Electronics Technology Co.,Ltd.,Suzhou 215123,China

出　　处：《Journal of Semiconductors》2024年第7期70-75,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.1237310);The Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321);the National Natural Science Foundation of China(Grant No.92163204);The Key Research and Development Program of Jiangsu Province(Grant No.BE2022057-1)。

摘　　要：In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.

关 键 词：AlGaN/GaN MIS HEMTs gate dielectric layer DEPLETION-MODE gate reliability I_(on)/I_(off)ratio 

分 类 号：TN386[电子电信—物理电子学]