DEPLETION-MODE

作品数：7被引量：3H指数：1
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相关领域：电子电信更多>>
相关作者：李海鸥尹军舰张海英叶甜春更多>>
相关机构：中国科学院微电子研究所更多>>
相关期刊：《Chinese Physics B》《Chinese Physics Letters》《Journal of Semiconductors》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划更多>>
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Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer
《Journal of Semiconductors》2024年第7期70-75,共6页Bosen Liu Guohao Yu Huimin Jia Jingyuan Zhu Jiaan Zhou Yu Li Bingliang Zhang Zhongkai Du Bohan Guo Lu Wang Qizhi Huang Leifeng Jiang Zhongming Zeng Zhipeng Wei Baoshun Zhang 
supported by the National Natural Science Foundation of China(Grant No.1237310);The Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321);the National Natural Science Foundation of China(Grant No.92163204);The Key Research and Development Program of Jiangsu Province(Grant No.BE2022057-1)。
In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film...
关键词：AlGaN/GaN MIS HEMTs gate dielectric layer DEPLETION-MODE gate reliability I_(on)/I_(off)ratio 
Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400℃
《Chinese Physics B》2021年第2期567-572,共6页Si-Cheng Liu Xiao-Yan Tang Qing-Wen Song Hao Yuan Yi-Meng Zhang Yi-Men Zhang Yu-Ming Zhang 
Project supported by the Key Research and Development Program of Shaanxi Province,China(Grant No.2020ZDLGY03-07);the National Science Foundation of China(Grant Nos.61774117 and 61774119);the Science Challenge Project(Grant No.TZ2018003);the National Key R&D Program of China(Grant No.2017YFB0102302);the Shaanxi Science&Technology Nova Program,China(Grant No.2019KJXX-029);the Key-Area Research and Development Program of Guang Dong Province,China(Grant No.2020B010170001);the Fundamental Research Funds for the Central Universities,China(Grant No.5012-20106205935)。
This paper presents the development of lateral depletion-mode n-channel 4 H-SiC junction field-effect transistors(LJFETs)using double-mesa process toward high-temperature integrated circuit(IC)applications.At room tem...
关键词：junction field-effect transistors high temperature 4H-SIC DEPLETION-MODE 
Monolithically integrated enhancement/depletion-mode Al Ga N/Ga N HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment被引量：1
《Journal of Semiconductors》2016年第5期78-83,共6页陈永和 郑雪峰 张进城 马晓华 郝跃 
Project supported by the National Natural Science Foundation of China(No.61334002);the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(No.ZHD201206);the Program for New Century Excellent Talents in University(No.NCET-12-0915)
A GaN-based E/D mode direct-couple logic 6 transistors SRAM unit and a voltage level shifter were designed and fabricated. E-mode and D-mode A1GaN/GaN HEMTs were integrated in one wafer using fluorine plasma treatment...
关键词：AlGaN/GaN E/D mode SRAM voltage level shifter 
Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment被引量：1
《Journal of Semiconductors》2011年第6期69-72,共4页谢元斌 全思 马晓华 张进城 李青民 郝跃 
Project supported by the National Natural Science Foundation of China(No60736033)
Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer.Direct-coupled FET logic circuits,such as an E/D HEMT inverter,NAND gate and D flip-flop,were fabricated...
关键词：ALGAN/GAN fluorine plasma treatment INVERTER NAND gate D flip-flop 
Design and application of a depletion-mode NJFET in a high-voltage BiCMOS process
《Journal of Semiconductors》2010年第8期70-73,共4页刘勇 唐昭焕 王志宽 杨永晖 杨卫东 胡永贵 
A novel depletion-mode NJFET compatible high-voltage BiCMOS process is proposed and experimentally demonstrated with a four-branch 12-bit DAC（digital-to-analog converter）.With this process,an NJFET with a pinch-off ...
关键词：depletion-mode NJFET high-voltage BiCMOS process ADC DAC temperature coefficient 
Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba0.4Sr0.6TiO3 Dielectric
《Chinese Physics Letters》2010年第7期285-287,共3页王丽萍 陆爱霞 窦威 万青 
Supported by the National Natural Science Foundation of China under Grant No 10874042, the Foundation for Authors of National Excellent Doctoral Dissertation of China under Grant No 200752, and the Natural Science Foundation of Zhejiang Province （No 0804201051）.
We report on the fabrication and characterization of low-voltage indium-tin-oxide （ITO） thin-film transistors （TFTs） gated by a0.4Sr0.6TiO3 （BST） gate dielectric deposited at room temperature. The 400-nm-thick B...
Monolithic Integration of InGaP/AlGaAs/InGaAs Enhancement/Depletion-Mode PHEMTs被引量：1
《Journal of Semiconductors》2005年第12期2281-2285,共5页李海鸥 张海英 尹军舰 叶甜春 
国家自然科学基金(批准号:60276021);国家重点基础研究发展规划(批准号:G2002CB311901)资助项目~~
The monolithic integration of enhancement- and depletion-mode （E/D-mode） InGaP/AIGaAs/InGaAs pseudomorphic high electron mobility transistors （PHEMTs） with a 1.0μm gate length is presented. Epilayers are grown on...
关键词：pseudomorphic high electron mobility transistors ENHANCEMENT-MODE DEPLETION-MODE threshold voltage GAAS 
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