Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400℃  

作　　者：Si-Cheng Liu Xiao-Yan Tang Qing-Wen Song Hao Yuan Yi-Meng Zhang Yi-Men Zhang Yu-Ming Zhang 刘思成;汤晓燕;宋庆文;袁昊;张艺蒙;张义门;张玉明(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China;School of Microelectronics,Xidian University,Xi'an 710071,China;XiDian-WuHu Research Institute,WuHu 241000,China)

机构地区：[1]Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071,China [2]School of Microelectronics,Xidian University,Xi'an 710071,China [3]XiDian-WuHu Research Institute,WuHu 241000,China

出　　处：《Chinese Physics B》2021年第2期567-572,共6页中国物理B（英文版）

基　　金：Project supported by the Key Research and Development Program of Shaanxi Province,China(Grant No.2020ZDLGY03-07);the National Science Foundation of China(Grant Nos.61774117 and 61774119);the Science Challenge Project(Grant No.TZ2018003);the National Key R&D Program of China(Grant No.2017YFB0102302);the Shaanxi Science&Technology Nova Program,China(Grant No.2019KJXX-029);the Key-Area Research and Development Program of Guang Dong Province,China(Grant No.2020B010170001);the Fundamental Research Funds for the Central Universities,China(Grant No.5012-20106205935)。

摘　　要：This paper presents the development of lateral depletion-mode n-channel 4 H-SiC junction field-effect transistors(LJFETs)using double-mesa process toward high-temperature integrated circuit(IC)applications.At room temperature,the fabricated LJFETs show a drain-to-source saturation current of 23.03μA/μm,which corresponds to a current density of 7678 A/cm^(2).The gate-to-source parasitic resistance of 17.56 kΩ·μm is reduced to contribute only 13.49%of the on-resistance of 130.15 kΩ·μm,which helps to improve the transconductance up to 8.61μS/μm.High temperature characteristics of LJFETs were performed from room temperature to 400℃.At temperatures up to 400℃in air,it is observed that the fabricated LJFETs still show normally-on operating characteristics.The drain-to-source saturation current,transconductance and intrinsic gain at 400℃are 7.47μA/μm,2.35μS/μm and 41.35,respectively.These results show significant improvement over state-of-the-art and make them attractive for high-temperature IC applications.

关 键 词：junction field-effect transistors high temperature 4H-SIC DEPLETION-MODE 

分 类 号：TN386[电子电信—物理电子学]