Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing  

作　　者：Huifan Xiong Xuesong Lu Xu Gao Yuchao Yan Shuai Liu Lihui Song Deren Yang Xiaodong Pi 

机构地区：[1]State Key Laboratory of Silicon and Advanced Semiconductor Materials&School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China [2]Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced Semiconductors,ZJU-Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou 311200,China

出　　处：《Journal of Semiconductors》2024年第7期77-83,共7页半导体学报（英文版）

基　　金：supported by the Open Fund(2022E10015)of the Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced Semiconductors,ZJU-Hangzhou Global Scientific and Technological Innovation Center。

摘　　要：Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

关 键 词：4H-SIC deep level transient spectroscopy(DLTS) photoluminescence(PL) DEFECTS 

分 类 号：TQ163.4[化学工程—高温制品工业] TN304[电子电信—物理电子学]