近存计算架构AI芯片中子单粒子效应  

Neutron induced single event effects on near-memory computing architecture AI chips

作　　者：杨卫涛 胡志良 何欢 莫莉华 赵小红 宋伍庆 易天成 梁天骄 贺朝会[2] 李永宏[2] 王斌[1] 吴龙胜 刘欢 时光 Yang Wei-Tao;Hu Zhi-Liang;He Huan;Mo Li-Hua;Zhao Xiao-Hong;Song Wu-Qing;Yi Tian-Cheng;Liang Tian-Jiao;He Chao-Hui;Li Yong-Hong;Wang Bin;Wu Long-Sheng;Liu Huan;Shi Guang(School of Microelectronics,Xidian University,Xi’an 710071,China;School of Nuclear Science and Technology,Xi’an Jiaotong University,Xi’an 710049,China;Spallation Neutron Source Science Center,Dongguan 523803,China;Aviation Engineering Institute,Air Force Engineering University,Xi’an 710000,China;School of Aerospace Science and Technology,Xidian University,Xi’an 710071,China)

机构地区：[1]西安电子科技大学微电子学院,西安710071 [2]西安交通大学核科学与技术学院,西安710049 [3]散裂中子源科学中心,东莞523803 [4]空军工程大学航空工程学院,西安710000 [5]西安电子科技大学空间科学与技术学院,西安710071

出　　处：《物理学报》2024年第13期378-385,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:12275211);国家自然科学基金青年科学基金(批准号:62104260);陕西省自然科学基础研究计划(批准号:2023-JC-QN-0015);中央高校基本科研业务费专项资金(批准号:XJSJ23049)资助的课题。

摘　　要：利用中国散裂中子源大气中子辐照谱仪,对某款16 nm FinFET工艺制造的近存计算架构人工智能AI芯片进行了大气中子单粒子效应辐照测试研究.辐照测试中,在累积中子注量为1.51×10^(10)n/cm^(2)(1 MeV以上)情况下,共探测到5类共计35个软错误,尤其是探测到不同于传统冯诺伊曼架构芯片单粒子效应的计算与存储单元同时发生单粒子效应新现象.基于所探测到的两类功能单元同时单粒子效应新现象,结合蒙特卡罗仿真模拟,初步给出了近存计算架构AI芯片内物理布局上,核心功能单元间可降低同时发生单粒子效应的安全间距建议.该研究为进一步探究非传统冯诺伊曼架构芯片单粒子效应提供了参考与借鉴.For the near-memory computing architecture AI chip manufactured by using 16 nm FinFET technology,atmospheric neutron single event effect irradiation tests are conducted for the first time in China by using the atmospheric neutron irradiation spectrometer(ANIS)at the China Spallation Neutron Source.During the irradiation,the YOLOV5 algorithm neural network running on the AI chip is used for real-time detection of target objects,including mice,keyboard,and luggage.The purpose of the test is to investigate the new single event effect that may occur on near-memory computing architecture AI chip.Finally,at an accumulated neutron fluence of 1.51×10^(10)n·cm^(-2)(above 1 MeV),a total of 35 soft errors are detected in 5 categories.Particularly noteworthy is the observation of a new finding,where both computing and memory units experience single event effects simultaneously,which is different from the traditional von Neumann architecture chips.Based on the single event effects that occur simultaneously in these two units,combined with Monte Carlo simulation,a preliminary estimation is made of the physical layout distance between the computing unit and the memory unit on the chip.Furthermore,suggestions are proposed to simultaneously reduce the risk of single event effect in multi cells.This study provides valuable reference and insights for further exploring the single event effects in non-traditional von Neumann architecture chips.

关 键 词：近存计算 AI芯片 散裂中子源 大气中子 单粒子效应 

分 类 号：TP18[自动化与计算机技术—控制理论与控制工程] TN40[自动化与计算机技术—控制科学与工程]