10 kV百纳秒前沿百微秒方波脉冲源的研制  

Development of a 10 kV hundred-nanosecond risetime hundred-microsecond pulse width rectangular pulse source

作　　者：唐梦媛 蒋泽赟 丁卫东[1] Tang Mengyuan;Jiang Zeyun;Ding Weidong(School of Electrical Engineering,Xi’an Jiaotong University,Xi’an 710049,China)

机构地区：[1]西安交通大学电气工程学院,西安710049

出　　处：《强激光与粒子束》2024年第8期175-180,共6页High Power Laser and Particle Beams

摘　　要：针对宽频测量系统量值传递需求,基于Marx电路设计了一款单极性方波脉冲源。该脉冲源以MOSFET器件为核心,采用光纤隔离驱动方案实现10 kV的方波脉冲输出。采用叠层结构搭建12级样机,实现了脉冲发生器的模块化与小型化。实验结果表明:该方波脉冲源在带300 pF以下的容性负载时可实现前沿小于百纳秒、输出电压kV级别、脉宽200μs的脉冲输出。该电源适用于宽频测量设备的方波响应性能实验等脉冲功率相关用途。For requirement of quantity transmission in broadband measurement system,a unipolar rectangular pulse source is designed to realize 10 kV rectangular wave pulse output with MOSFET as the core component based on Marx circuit.The modular and miniaturization of the pulse generator is realized by using the stack structure to build the 12-stage prototype.The experimental results show that when the input voltage is 850 V,the proposed pulse source can generate a fast output pulse with 10 kV maximum voltage,rise time less than 100 ns,200μs pulse width under the capacitive load below 300 pF.The power supply can be used in rectangular wave response performance test of broadband measuring equipment or pulse power related applications.

关 键 词：脉冲源 容性负载 MOSFET MARX电路 长脉宽 

分 类 号：TM832[电气工程—高电压与绝缘技术]