SiC单晶生长设备热场设计分析  

Thermal Field Design Analysis of SiC Single Crystal Growth Equipment

作　　者：曹晓光 Cao Xiaoguang(Yongchun Technology Equipment Trading(Shanghai)Co.,Ltd.,Shanghai 201204,CHN)

机构地区：[1]涌淳科技设备贸易(上海)有限公司,上海201204

出　　处：《模具制造》2024年第7期189-191,共3页Die & Mould Manufacture

摘　　要：在硅碳化物(SiC)单晶生长设备的热场设计中,充分考虑了温度分布、热流分布和热应力等关键因素,这对确保单晶质量、提高生长效率和延长设备寿命至关重要,热场设计涉及炉体结构、加热系统、冷却系统以及温度控制系统等多个方面,需要综合考虑热工学、材料学和机械工程等多个学科的知识。In the thermal field design of silicon carbide(SiC)single crystal growth equipment,key factors such as temperature distribution,heat flux distribution,and thermal stress are fully considered.This is crucial for ensuring single crystal quality,improving growth efficiency,and extending equipment life.Thermal field design involves multiple aspects such as furnace structure,heating system,cooling system,and temperature control system,and requires comprehensive consideration of knowledge from multiple disciplines such as thermal engineering,materials science,and mechanical engineering.

关 键 词：SIC单晶 生长设备 热场设计 

分 类 号：O782[理学—晶体学]