基于THz-TDR的芯片金属微带线缺陷检测  

Metal microstrip line defect detection of chip based on THz-TDR technology

作　　者：徐振 徐德刚[1,2] 刘龙海 李吉宁 张嘉昕 王坦[3] 任翔[3] 乔秀铭 姜晨 XU Zhen;XU De-Gang;LIU Long-Hai;LI Ji-Ning;ZHANG Jia-Xin;WANG Tan;REN Xiang;QIAO Xiu-Ming;JIANG Chen(School of Precision Instrμments and Opto-Electronics Engineering,Tianjin University,Tianjin 300072,China;Key Laboratory of Opto-Electronic Information Technology(Ministry of Education),Tianjin University,Tianjin 300072,China;Aerospace Science&Industry Corp Defense Technology R&T Center,Beijing 100854,China)

机构地区：[1]天津大学精密仪器与光电子工程学院,天津300072 [2]天津大学光电信息技术教育部重点实验室,天津300072 [3]航天科工防御技术研究试验中心,北京100854

出　　处：《红外与毫米波学报》2024年第3期359-368,共10页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(U22A20123,62175182,62275193,U22A20353)。

摘　　要：针对体积小、走线密集、集成度高的封装芯片缺陷检测,目前的主要检测手段存在精度低、周期长等缺点。为弥补传统检测方法的不足,作者结合太赫兹技术与时域反射技术,探究对芯片上金属导线缺陷检测的可行性。首先在不同宽度的金属微带线上加工了不同比例的凸起、凹槽缺陷,模拟集成芯片中金属导线的不完全开/短路等阻抗不匹配情况,利用太赫兹时域反射计采集其时域反射信号。然后根据时域反射脉冲对应的时间分别对不同缺陷程度、不同缺陷类型进行定性分析,并精确计算出了芯片上金属微带线的缺陷位置。最后利用有限元分析法对硅基底上存在缺陷的金属微带线进行仿真分析,与实验结果具有良好的一致性。该研究表明,太赫兹技术与时域反射技术结合能够实现对芯片上金属导线缺陷的诊断检测,为集成芯片的缺陷检测提供了经验参考。The current main detection methods for packaging chip defects with small size,dense wiring,and high integration have drawbacks such as low accuracy and long cycle time.To compensate for the shortcomings of traditional detection methods,this study combines terahertz technology with time-domain reflection technology to explore the feasibility of detecting metal wire defects on chips.Firstly,different proportions of convex defects and concave defects were processed on metal microstrip lines of different widths to simulate incomplete opening/short circuits of metal wires in integrated chips.The time-domain reflection signals were collected using a terahertz time-domain reflectometer.Then,qualitative analysis was conducted on different defect degrees and types based on the corresponding time of time-domain reflection pulses,and the defect positions of the metal wires on the chip were accurately calculated.Finally,the finite element analysis method was used to simulate and analyze the metal wires with defects on the silicon substrate,which showed perfect consistency with the experimental results.This research shows that the combined terahertz technology with time-domain reflection technology can achieve the diagnosis and detection of metal wire defects on chips,providing an empirical reference for defect detection in integrated chips.

关 键 词：太赫兹 时域反射 微带线 集成芯片 缺陷检测 

分 类 号：O433.4[机械工程—光学工程] TN29[理学—光学]