GB/T 43885《碳化硅外延片》标准解读  

Interpretation of GB/T 43885《Silicon carbide epitaxial wafers》

作　　者：李素青 骆红 LI Su-qing;LUO Hong(China Nonferrous Metals Techno-Economic Research Institute Co.,Ltd.,Beijing 100080,China;Nanjing Guosheng Electronics Co.,Ltd.,Nanjing 211100,China)

机构地区：[1]有色金属技术经济研究院有限责任公司,北京100080 [2]南京国盛电子有限公司,江苏南京211100

出　　处：《世界有色金属》2024年第10期193-195,共3页World Nonferrous Metals

摘　　要：碳化硅外延片具有宽禁带、高击穿电场、高饱和漂移速率、高热导率等优异的电学性能,特别适用于制作大功率、高频、高温及抗辐射电子器件,在太阳能风能发电、轨道交通、智能电网、电动汽车等领域具有广泛的应用,该标准的制定对规范碳化硅外延片的各项技术指标,确保国内碳化硅外延片整体的研发和产业化水平紧紧跟随国际发展趋势,保障国产供应链安全,有着举足轻重的意义。Silicon carbide epitaxial wafers have wide band gap,high breakdown electric field,high saturation drift rate,high thermal conductivity and other excellent electrical properties,especially suitable for the production of high power,high frequency,high temperature and radiation resistance electronic devices,in solar and wind power generation,rail transit,smart grid,electric vehicles and other fields have a wide range of applications.The formulation of this standard is of pivotal significance to standardize the technical indicators of silicon carbide epitaxial wafers,ensure that the overall research and development and industrialization level of domestic silicon carbide epitaxial wafers closely follow the international development trend,and ensure the safety of domestic supply chain.

关 键 词：碳化硅 碳化硅外延片 

分 类 号：F426.63[经济管理—产业经济]