原子层沉积法制备鸡蛋清栅介质ZnO-TFT及其性能研究  

Fabrication and Electrical Properties of ZnO-TFT with Chicken Albumen Gate Dielectric by Atomic-Layer Deposition Method

作　　者：王聪[1,2] 黄荷 刘玉荣[2] 彭强[1] WANG Cong;HUANG He;LIU Yurong;PENG Qiang(School of Engineering,Shanwei Institute of Technology,Shanwei Guangdong 516600,China;School of Microelectronics,South China University of Technology,Guangzhou Guangdong 510640,China)

机构地区：[1]汕尾职业技术学院工程学院,广东汕尾516600 [2]华南理工大学微电子学院,广东广州510640

出　　处：《电子器件》2024年第3期865-869,共5页Chinese Journal of Electron Devices

基　　金：广东省普通高校重点领域专项(新一代信息技术)项目(2020ZDZX3125);国家自然科学基金项目(61871195);广东省基础与应用基础研究基金项目(2021A1515011872)。

摘　　要：采用原子层沉积法(ALD),以天然鸡蛋清作为栅介质制备双电层氧化锌薄膜晶体管(ZnO-TFT),并对其电性能进行测试与分析,研究了该器件在栅偏压应力条件下和空气环境下电学性能的稳定性。结果表明,氧化锌薄膜晶体管电特性表现良好,阈值电压为0.73 V,载流子饱和迁移率为9.95 cm^(2)/(V·s),开关电流比为1.8×10^(4),亚阈值摆幅为0.33 V/decade,工作电压可低至3.0 V。研究还发现,在正栅偏压应力作用下或在空气环境下器件的电性能皆呈现出不稳定性。栅偏压应力不稳定性主要与栅介质层界面处正电荷集聚及新缺陷态的产生有关;干燥空气环境下电性能的退化可解释为沟道有源层吸附空气中的氧气导致沟道层中载流子有所消耗,以及鸡蛋清电解质被氧化而引起双电层效应的退化。A low-voltage electric-double layer zinc oxide thin film transistor(ZnO-TFT)is prepared through atomic layer deposition(ALD)by using natural chicken albumen as the gate dielectric layer.The electrical properties of the ZnO-TFT are characterized,and the electrical stabilities of the device under constant gate-bias stress and in air environment are investigated.The ZnO-TFT exhibits good electrical properties with a threshold voltage of 0.73 V,a carrier saturation mobility of 9.95 cm^(2)/(V·s),an on/off current ratio of 1.8×10^(4),a subthreshold swing of 0.33 V/decade and operation voltage of less than 3.0 V.It is found that the electrical properties of ZnO-TFT are instable under static gate-bias stress and in air environment.The gate-bias stress instability may be related to the positive charge accumulation and new defect generation near the gate dielectric/ZnO interface,while the degradation of electrical performance in air environment is attributed to the carrier depletion in the channel caused by the absorption of oxygen and the degradation of EDL effect induced by oxidation of chicken albumen.

关 键 词：氧化锌薄膜晶体管 偏压应力 稳定性 双电层 原子层沉积 

分 类 号：TN321.5[电子电信—物理电子学]