2维SnO_(x)/Ga_(2)O_(3)异质结的制备及其探测器的光电性能  

Fabrication of two-dimensional SnO_(x)/Ga_(2)O_(3) heterojunctions and optoelectronic performance of its detectors

作　　者：翟睿 潘书生 ZHAI Rui;PAN Shusheng(School of Physics and Materials Science,Guangzhou University,Guangzhou 510006,China)

机构地区：[1]广州大学物理与材料科学学院,广东广州510006

出　　处：《安徽大学学报（自然科学版）》2024年第4期44-49,共6页Journal of Anhui University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(51872054)。

摘　　要：紫外探测器在天文、军事、医学等方面具有重要应用前景.采用液态金属转移法制备2维SnO_(x)/Ga_(2)O_(3)异质结,并构建2维SnO_(x)/Ga_(2)O_(3)异质结紫外探测器,研究2维异质结紫外探测器的光电性能.研究结果表明:该文探测器具有良好的光电性能,有潜在应用价值.Ultraviolet photodetectors hold significant prospects for applications in astronomy,military,medicine,and other fields.The 2D SnO_(x)/Ga_(2)O_(3) heterojunction was fabricated by liquid metal transfer method.The 2D SnO_(x)/Ga_(2)O_(3) heterojunction ultraviolet detector was constructed.The optoelectronic performance of the 2D heterojunction ultraviolet detector was studied.The study results showed that the detector had good optoelectronic performance and potential application value.

关 键 词：2维材料 紫外探测器 宽禁带金属氧化物 异质结 

分 类 号：O472[理学—半导体物理]