红外测温仪在碳化硅单晶生长炉中的应用  

Application of Infrared Thermometer in Silicon Carbide Single Crystal Growth Furnace

作　　者：靳丽岩 JIN Liyan(The 2nd Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,太原030024

出　　处：《电子工艺技术》2024年第4期51-55,共5页Electronics Process Technology

摘　　要：碳化硅单晶生长炉的温度监测及控制是碳化硅晶体生长工艺的关键。针对碳化硅单晶生长炉的高温测量需求及使用工况,分析了红外测温仪测温的工作原理及分类,研究了碳化硅单晶生长炉的测温结构及温度控制技术。通过引入模糊PID算法实现了热场温度的稳定控制,经过升温测试试验,达到碳化硅工艺生长的要求。The temperature monitoring and control of the silicon carbide single crystal growth furnace is the key to the silicon carbide crystal growth process.According to the high temperature measurement requirements and operating conditions of silicon carbide single crystal growth furnace,the working principle and classification of infrared thermometer are analyzed,and the temperature measurement structure and temperature control technology of silicon carbide single crystal growth furnace are studied.Fuzzy PID algorithm is introduced to achieve stable control of thermal field temperature.After temperature test,the requirements of silicon carbide process growth are met.

关 键 词：碳化硅 单晶生长炉 红外测温仪 高温测量 

分 类 号：TN307[电子电信—物理电子学]