3C-SiC纳米线的化学气相沉积法制备及超声裁剪研究  

Preparation and ultrasonic cutting of 3C-SiC nanowires by chemical vapor deposition method

作　　者：彭善成 李一言 马慧磊 杜铭骐 刘传歆 贺周同[1] PENG Shancheng;LI Yiyan;MA Huilei;DU Mingqi;LIU Chuanxin;HE Zhoutong(Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201800,China;University of Chinese Academy of Sciences,Beijing 100049,China;School of Nuclear Science and Technology,University of South China,Hengyang 421001,China;College of Sciences,Shihezi University,Shihezi 832003,China;Science and Technology on Thermostructural Composite Materials Laboratory,Northwestern Polytechnical University,Xi'an 710072,China)

机构地区：[1]中国科学院上海应用物理研究所,上海201800 [2]中国科学院大学,北京100049 [3]南华大学核科学技术学院,衡阳421001 [4]石河子大学理学院,石河子832003 [5]西北工业大学超高温结构复合材料重点实验室,西安710072

出　　处：《核技术》2024年第7期79-89,共11页Nuclear Techniques

基　　金：国家自然科学基金(No.U20B2010)资助。

摘　　要：3C-SiC又称β-SiC,有着优异的耐高温、耐腐蚀、耐辐照性能,是反应堆这类复杂环境中的理想材料。近年来,一维碳化硅纳米线材料成为碳化硅材料研究领域的热门研究方向,同时也面临加工手段匮乏、加工难度大的问题。我们通过化学气相沉积法成功制备了含有高密度堆叠层错的3C-SiC纳米线,并采用扫描电子显微镜(Scanning Electron Microscope,SEM)、透射电子显微镜(Transmission Electron Microscope,TEM)、X射线衍射(X-Ray Diffraction,XRD)以及拉曼光谱(Raman spectrum)等多种手段对制备出来的碳化硅纳米线进行了微观结构表征,揭示了其独特的微观形态和晶体结构特征;进一步研究了超声裁剪碳化硅纳米线,利用“气泡-射流”模型结合碳化硅纳米线的形态解释了碳化硅纳米线的超声裁剪过程,探索了碳化硅纳米线的直径、强度、缺陷等对其在超声过程中断裂行为的影响。本研究为碳化硅纳米线的超声裁剪加工和纳米线的强度研究提供了新的视角,对于未来碳化硅纳米线在核能领域的应用具有重要的意义。[Background]3C-SiC(β-SiC)exhibits outstanding electrochemical properties and radiation resistance,surpassing hexagonal-phase silicon carbide in irradiation resistance.As a promising candidate for the next generation of structural materials in nuclear applications and high-performance precision electronic devices for challenging reactor environments,the material has been garnering significant attention in recent decades.Within this realm,the exploration of one-dimensional silicon carbide nanomaterials has become a focal point in silicon carbide materials research.However,their practical applications have been hindered by challenges such as the absence of effective nanomaterial processing methods and processing complexities.Notably,ultrasonic processing technology has demonstrated effectiveness in addressing these challenges.[Purpose]This study aims to synthesize and study 3C-SiC nanowires(NWs),investigating their ultrasonic fracture behavior for comprehensive understanding of the ultrasonic fracture characteristics of 3C-SiC NWs,laying the groundwork for basic research in the processing of one-dimensional SiC nanomaterials.[Methods]Firstly,silicon carbide nanowires were prepared by chemical vapor deposition.Then the silicon carbide nanowires were characterized by microstructure observed by scanning electron microscope(SEM),transmission electron microscope(TEM),X-Ray diffraction(XRD)and Raman spectrum.Subsequently,the 3C-SiC nanowires were subjected to ultrasonic treatment,and the average length-to-diameter ratios of the ultrasonically treated nanowires were statistically analyzed to elucidate the effect of ultrasonic treatment on the nanowires.Finally,the strength of the silicon carbide nanowires was estimated by combining the bubble jet model and statistical data.[Results]The findings reveal that the synthesized 3C-SiC NWs are predominantly of the 3C-SiC phase,exhibiting a notable presence of stacking faults.Ultrasonic treatment significantly influences the SiC NWs,leading to a noticeable reduction in the averag

关 键 词：3C-SIC 化学气相沉积 碳化硅纳米线 纳米线断裂行为 超声裁剪 

分 类 号：TL99[核科学技术—核技术及应用]