Atomic-scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy  

作　　者：Lan Li Ran Bi Zuoyuan Dong Changqing Ye Jing Xie Chaolun Wang Xiaomei Li Kin-Leong Pey Ming Li Xing Wu 

机构地区：[1]School of Integrated Circuits,East China Normal University,Shanghai,China [2]School of Integrated Circuits,Peking University,Beijing,China [3]Engineering Product Development Pillar,Singapore University of Technology and Design,Singapore,Singapore

出　　处：《Electron》2024年第2期29-52,共24页电子（英文）

基　　金：supported by National Natural Science Foundation of China (12234005);the Fundamental Research Funds for the Central Universities。

摘　　要：Three-dimensional stacked transistors based on Si/SiGe heterojunction are a potential candidate for future low-power and high-performance computing in integrated circuits.Observing and accurately measuring strain in Si/SiGe heterojunctions is critical to increasing carrier mobility and improving device performance.Transmission electron microscopy(TEM)with high spatial resolution and analytical capabilities provides technical support for atomic-scale strain measurement and promotes significant progress in strain mapping technology.This paper reviews atomic-scale strain analysis for advanced Si/SiGe heterostructure based on TEM techniques.Convergent-beam electron diffraction,nano-beam electron diffraction,dark-field electron holography,and high-resolution TEM with geometrical phase analysis,are comprehensively discussed in terms of spatial resolution,strain precision,field of view,reference position,and data processing.Also,the advantages and critical issues of these strain analysis methods based on the TEM technique are sum-marized,and the future direction of TEM techniques in the related areas is prospected.

关 键 词：GPA HETEROSTRUCTURE SI/SIGE STRAIN transmission electron microscopy 

分 类 号：TH742[机械工程—光学工程]