云南高校图书馆联盟文献共享服务平台- SI/SIGE

SI/SIGE: 作品数：59被引量：59H指数：4; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：陈建新史辰杨维明李成林桂江更多>>; 相关机构：北京工业大学中国科学院厦门大学西安交通大学更多>>; 相关期刊：《Optoelectronics Letters》《Journal of Rare Earths》《半导体杂志》《中国学术期刊文摘》更多>>; 相关基金：国家自然科学基金北京市自然科学基金国家重点基础研究发展计划北京市科技新星计划更多>>

Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator: 《Chinese Physics B》2024年第9期139-143,共5页Shun-Li Jiang Tian-Yi Jiang Yong-Qiang Xu Rui Wu Tian-Yue Hao Shu-Kun Ye Ran-Ran Cai Bao-Chuan Wang Hai-Ou Li Gang Cao Guo-Ping Guo; the National Natural Science Foun-dation of China(Grant Nos.92265113,12074368,12304560,and 12034018);China Postdoctoral Science Foundation(Grant Nos.BX20220281 and 2023M733408).; Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation.To satisfy the connectivity requirements and reduce the lithographic com...; 关键词：triple-quantum dot strong coupling circuit quantum electrodynamics(cQED) scalable siliconbased cQED architectures

非掺杂型Si/SiGe异质结外延与表征: 《物理学报》2024年第11期297-304,共8页耿鑫张结印卢文龙明铭刘方泽符彬啸褚逸昕颜谋回王保传张新定郭国平张建军; 国家自然科学基金(批准号:92165207,62225407,12304100);松山湖材料实验室支持项目(批准号:XMYS2023002);国家科创2030项目(批准号:2021ZD0302300)资助的课题。; 以自旋为编码单元的硅基半导体量子计算与传统微电子工艺兼容,易拓展且可以同位素纯化提高退相干时间,因而备受关注.本研究工作通过分子束外延生长了高质量非掺杂型Si/SiGe异质结并测试了二维电子气迁移率.球差电镜观察到原子级尖锐界面...; 关键词：Si/SiGe异质结二维电子气霍尔迁移率硅基量子计算

Atomic-scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy: 《Electron》2024年第2期29-52,共24页Lan Li Ran Bi Zuoyuan Dong Changqing Ye Jing Xie Chaolun Wang Xiaomei Li Kin-Leong Pey Ming Li Xing Wu; supported by National Natural Science Foundation of China (12234005);the Fundamental Research Funds for the Central Universities。; Three-dimensional stacked transistors based on Si/SiGe heterojunction are a potential candidate for future low-power and high-performance computing in integrated circuits.Observing and accurately measuring strain in S...; 关键词：GPA HETEROSTRUCTURE SI/SIGE STRAIN transmission electron microscopy

Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface: 《Chinese Physics B》2023年第10期126-133,共8页王刚管闪宋志刚骆军委; Project supported by the National Science Fund for Distinguished Young Scholars(Grant No.11925407);the Basic Science Center Program of the National Natural Science Foundation of China(Grant No.61888102);the Key Research Program of Frontier Sciences of CAS(Grant No.ZDBS-LYJSC019);CAS Project for Young Scientists in Basic Research(Grant No.YSBR-026)。; The achievement of universal quantum computing critically relies on scalability.However,ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable...; 关键词：quantum wells valley splitting alloy concentration fluctuation

300GHz InP DHBT单片集成放大器被引量：4: 《固体电子学研究与进展》2017年第4期F0003-F0003,共1页孙岩程伟陆海燕王元常龙孔月婵陈堂胜; 太赫兹技术在成像雷达以及宽带通信等领域具有广阔应用前景。太赫兹功率放大器是太赫兹系统的核心单元。磷化铟双异质结双极型晶体管（InP DHBT）具有非常高的截止频率以及较高的击穿电压（相对Si／SiGe而言），适合于太赫兹功率放大器...; 关键词：DHBT 单片集成放大器 INP 异质结双极型晶体管功率放大器 SI/SIGE 太赫兹宽带通信

Oxygen Scavenging Effect of LaLuO_3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors: 《Chinese Physics Letters》2016年第5期108-110,共3页冯锦锋刘畅俞文杰彭颖红; Supported by the National Natural Science Foundation of China under Grant No 61306126; Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold...; 关键词：SOI SiGe TIN Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors of in Gate

一种新型Si/SiGe/Si双异质结PIN电学调制结构的异质结能带分析被引量：4: 《物理学报》2016年第5期90-97,共8页冯松薛斌李连碧翟学军宋立勋朱长军; 国家自然科学基金(批准号:61204080);陕西省教育厅科研计划(批准号:15JK1292);西安工程大学博士科研启动基金(批准号:BS1128;BS1436);西安工程大学研究生教育"质量工程"项目(批准号:15yzl10);陕西省普通高校重点学科建设专项资金建设项目(批准号:(2008)169)资助的课题~~; PIN结构是电光调制器中常见的一种电学调制结构,该结构中载流子注入效率直接影响着电光调制器的性能.在前期的研究中,我们在SOI材料的基础上提出了一种新型Si/Si Ge/Si双异质结PIN电学调制结构,可以有效提高载流子注入效率,降低调制功耗...; 关键词：光电子器件电光调制器锗硅异质结能带

热处理中Si/SiGe/Si界面互扩散被引量：1: 《功能材料与器件学报》2014年第6期205-208,共4页文娇刘畅俞文杰张波薛忠营狄增峰闵嘉华; 上海市自然科学基金(项目编号:12ZR1453000;12ZR1453100;12ZR1436300);国家自然科学基金(项目编号:61306126;61306127;61106015)资助; 利用高分辨率X射线衍射(HRXRD)和拉曼光谱(Raman spectrum)研究了由扩散引起Si/Si Ge/Si异质结中Si/Si Ge异质界面互混的现象。结果表明:应变弛豫前Si/Si Ge异质界面互混程度随热载荷的增加而增强;Si/Si Ge异质界面的硼(B)浓度梯度抑制...; 关键词：Si/SiGe互扩散热载荷硼浓度梯度

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication: 《Modeling and Numerical Simulation of Material Science》2014年第1期37-52,共16页Noureddine Sfina Naima Yahyaoui Moncef Said Jean-Louis Lazzari; In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1-xGex/Si multiple quantum wells on relaxed Si1-yGey is proposed for photodetection applications. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack consi...; 关键词：STRAINED SIGE/SI Quantum WELLS Band Structure Device Engineering P-I-N Infrared Photodetectors

Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET被引量：2: 《Journal of Central South University》2013年第9期2366-2371,共6页王斌张鹤鸣胡辉勇张玉明周春宇李妤晨; Projects(51308040203,6139801)supported by National Ministries and Commissions,China;Projects(72105499,72104089)supported by the Fundamental Research Funds for the Central Universities,China;Project(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China; A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET.Experimental results were used to validate this model.Th...; 关键词：strained-Si/SiGe PMOSFET gate C-V characteristics PLATEAU doping concentration strained-Si layer thickness mass fraction of Ge

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