化学机械抛光中摩擦润滑与化学行为研究进展  

A review of research on friction lubrication and chemical behavior in chemical mechanical polishing

作　　者：霍金向 高宝红 李雯浩宇 贺斌 梁斌 刘鸣瑜 陈旭华 HUO Jinxiang;GAO Baohong;LI Wenhaoru;HE Bin;LIANG Bin;LIU Mingyu;CHEN Xuhua(School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Hebei Collaborative Innovation Center of Microelectronic Materials and Technology in Ultra Precision Processing,Tianjin 300130,China;Hebei Engineering Research Center of Microelectronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]河北省微电子超精密加工材料与技术协同创新中心,天津300130 [3]河北省微电子专用材料与器件工程研究中心,天津300130

出　　处：《应用化工》2024年第6期1416-1420,共5页Applied Chemical Industry

基　　金：国家自然科学基金青年科学基金项目(61704046);河北省自然科学基金(F2022202072)。

摘　　要：从三个方面对化学机械抛光(CMP)过程中摩擦与化学行为的研究进行了综述,其主要分为:关于抛光液中化学组分影响晶圆摩擦润滑状态的实验研究、CMP过程中抛光液组分与晶圆表面材料反应的分子动力学和反应力场分子动力学模拟研究、同时考虑摩擦润滑与化学反应的CMP材料去除速率模型。针对CMP过程中机械与化学协同作用的机理研究尚不明确,考虑机械摩擦与化学反应协同作用是未来完善CMP理论框架的重要研究方向之一。The research on friction and chemical behavior in CMP process is reviewed.The relevant articles are mainly divided into three aspects:Experimental study on the effect of chemical components in polishing fluid on the tribological lubrication state of wafer,molecular dynamics simulation of the reaction between polishing fluid components and wafer surface materials in CMP process and molecular dynamics simulation of reaction force field,CMP material removal rate model considering both tribological lubrication and chemical reaction.The mechanism of mechanical and chemical synergies in CMP process is still unclear,considering the synergies between mechanical friction and chemical reaction is one of the important research directions to improve the theoretical framework of CMP in the future.

关 键 词：化学机械抛光 化学机械协同 摩擦化学 摩擦系数 分子动力学 

分 类 号：TQ021[化学工程] TN405[电子电信—微电子学与固体电子学]