碳化硅MOSFET驱动电路的研究与设计  

Study and Design of SiC MOSFET Drive Circuit

作　　者：杜太磊 DU Tailei(CRRC Qingdao Sifang Rolling Stock Research Institute Co.,Ltd.,Qingdao 266031,China)

机构地区：[1]中车青岛四方车辆研究所有限公司,山东青岛266031

出　　处：《智慧轨道交通》2024年第4期18-21,26,共5页SMART RAIL TRANSIT

摘　　要：随着碳化硅功率器件技术的不断发展,碳化硅功率器件发展优势明显,将逐步成为未来主流功率半导体器件。多家公司推出了多款碳化硅MOSFET,但是对于高压应用的碳化硅MOSFET驱动产品还处于半空白状态。文章针对A公司FF11MR12W1M1B11型碳化硅模块的驱动进行了研究与设计,在满足碳化硅驱动电流的基础上,增加了有源钳位保护、退饱和保护、故障信号反馈功能。有源钳位保护电路中具有动态有源钳位设计,在MOSFET关断时,降低嵌位电压来快速保护MOSFET,静态时抬高嵌位电压防止误动作。退饱和保护电路检测到故障后可迅速关闭驱动,并将故障信号进行反馈。通过双脉冲测试,验证了文中设计的驱动板功能,对FF11MR12W1M1B11型碳化硅模块在后续项目中的应用具有重要意义。With the continuous development of the SiC power device technology,the development advantage of SiC power device is obvious,which will become the dominant power semiconductor devices gradually.Several companies have launched multiple models of SiC MOSFET,but the SiC MOSFET drive product for high-voltage applications is still in a semi-blank state.This article studies and designs the FF11MR12W1M1B11 SiC module drive for A company.On the basis of the SiC drive current,the active clamp protection,the desaturation protection,and the fault signal feedback function are added.The active clamp protection circuit adopts the dynamic active clamp design.When MOSFET is shut off,the clamp voltage is reduced to quickly protect MOSFET,while in a static state,the clamp voltage is increased to prevent malfunction.After detecting a fault,the desaturation protection circuit will quickly shut off the drive and feedback the fault signal.The double pulse test verifies the function of the drive board designed in the article,which is significant for the application of the FF11MR12W1M1B11 SiC module in subsequent projects.

关 键 词：碳化硅 驱动电路 有源钳位保护 退饱和保护 双脉冲测试 

分 类 号：TM23[一般工业技术—材料科学与工程]