ITO/AgNWs/ITO薄膜的制备及其性能研究  

Preparation and Properties of ITO/AgNWs/ITO Films

作　　者：杨涛[1] 陈彩明[1] 黄瑜佳 吴少平 徐华蕊[1] 汪坤喆 朱归胜[1] YANG Tao;CHEN Caiming;HUANG Yujia;WU Shaoping;XU Huarui;WANG Kunzhe;ZHU Guisheng(Guangxi Key Laboratory of Information Materials,Engineering Research Center of Electronic Information Materials and Devices,Ministry of Education,School of Materials Science and Engineering,Guilin University of Electronic Technology,Guilin 541004,China;Guangxi Zhongpei optoelectronic Technology Co.,Ltd.,Laibin 546100,China)

机构地区：[1]桂林电子科技大学材料科学与工程学院,电子信息材料与器件教育部工程研究中心,广西信息材料重点实验室,桂林541004 [2]广西中沛光电科技有限公司,来宾546100

出　　处：《人工晶体学报》2024年第7期1150-1159,共10页Journal of Synthetic Crystals

基　　金：国家自然科学基金(62364007,U21A2065);广西科技计划(桂科AA21077018,桂科AD23023013,桂科AB23075218);桂林市科学研究与技术开发计划(20220120-1);电子信息材料与器件教育部工程研究中心重点基金(EIMD-AA202001)。

摘　　要：随着显示面板向超大尺寸、超高清、可触控的方向发展,单一的氧化铟锡(ITO)薄膜难以满足显示器件越来越高的光电性能要求,因此复合导电薄膜得以发展。本文制备了以二维银纳米线(AgNWs)导电网络嵌入ITO薄膜形成的ITO(222)/AgNWs/ITO(400)复合薄膜结构,系统研究了AgNWs添加量和上层ITO薄膜溅射温度对复合薄膜结构与光电性能的影响,AgNWs金属导电网络不仅提升了薄膜的电学性能,还保持了优良的光学性能。结果表明,在旋涂600μL的AgNWs分散液、上层ITO薄膜的溅射温度为175℃时,制备的复合ITO薄膜方阻为7.13Ω/□,在550 nm处透过率为91.52%,且品质因数为57.82×10^(-3)Ω^(-1),实现了超低电阻率和高可见光透过率复合ITO薄膜的制备。With the advancement of display panel technology towards ultra-large size,ultra-high-definition and touch control capability,the traditional single indium tin oxide(ITO)film alone struggles to meet the increasingly demanding photoelectric performance requirements of display devices.Consequently,composite conductive films have been developed.This study fabricated an ITO(222)/AgNWs/ITO(400)composite film structure by embedding a two-dimensional silver nanowires(AgNWs)conductive networks into ITO films.The influences of the AgNWs addition and the sputtering temperature of the upper ITO film on the structural and optoelectronic properties of the composite film were systematically investigated.The AgNWs metal conductive networks not only enhance the electrical properties of the composite films but also maintain excellent optical characteristics.The results demonstrate that with a spin-coating of 600μL AgNWs dispersion and a sputtering temperature of 175℃for the upper ITO film,the fabricated composite ITO film has a sheet resistance of 7.13Ω/□,an impressive transmittance of 91.52%at 550 nm,and a figure of merit of 57.82×10^(-3)Ω^(-1),achieving the preparation of a composite ITO film with ultra-low resistivity and high visible light transmittance.

关 键 词：ITO薄膜 磁控溅射 AgNWs 导电网络 复合薄膜 光电性能 溅射温度 

分 类 号：O78[理学—晶体学] O484