内嵌Flash存储器可靠性评估方法的分析及应用  

Analysis and Application of Reliability Evaluation Method for Embedded Flash Memory

作　　者：周焕富 刘伟 周成 ZHOU Huanfu;LIU Wei;ZHOU Cheng(China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China)

机构地区：[1]中科芯集成电路有限公司,江苏无锡214072

出　　处：《电子与封装》2024年第7期43-49,共7页Electronics & Packaging

摘　　要：介绍了存储器分类及Flash存储器的基本结构,分析了非易失性存储器(NVM)可靠性试验标准的特点。从试验项目、试验条件、样品数量和数据图形等方面比较了JEDEC和AEC发布的NVM可靠性试验的标准和方法。以2款存储容量分别为64 kB和128 kB的MCU芯片为试验对象,依据JEDEC和AEC发布的试验标准和方法,设计了针对MCU芯片内嵌Flash存储器可靠性的评估试验,为Flash存储器的设计和验证工作提供参考。Classification of memory and the basic structure of Flash memory are introduced,and the characteristics of the reliability test standard of non-volatile memory(NVM)are analyzed.The standards and methods of NVM reliability test published by JEDEC and AEC are compared in terms of test items,test conditions,sample quantity and data graphs.Based on the test standards and methods published by JEDEC and AEC,two MCU chips with memory capacities of 64 kB and 128 kB are used as test objects to design an evaluation test for the reliability of embedded Flash memory in MCU chips,providing a reference for the design and verification of Flash memory.

关 键 词：FLASH存储器 擦写循环 数据保持 

分 类 号：TN406[电子电信—微电子学与固体电子学]