一种基于汉明码纠错的高可靠存储系统设计  

Design of a High-Reliability Storage System Based on Hamming Code Error Correction

作　　者：史兴强 刘梦影 王芬芬 陆皆晟 陈红 SHI Xingqiang;LIU Mengying;WANG Fenfen;LU Jiesheng;CHEN Hong(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子与封装》2024年第7期57-62,共6页Electronics & Packaging

摘　　要：为提高片上存储的可靠性,设计了一种基于汉明码纠错的高可靠存储系统。该电路包括检错纠错(ECC)寄存器模块和ECC_CTRL模块。CPU可通过高级高性能总线(AHB)配置ECC寄存器以实现相应功能,SRAM和Flash的读写数据则通过ECC_CTRL模块进行校验码的生成和数据的检错纠错。仿真结果表明,该高可靠存储系统能够检测单bit和双bit错误,纠正单bit错误,提高数据存储的可靠性,同时可将发生错误的数据和地址锁存在寄存器中,以免用户访问发生错误的地址。In order to enhance the reliability of on-chip storage,a high-reliability storage system based on Hamming code error correction is designed.This circuit is composed of an error detection and correction(ECC)register module and an ECC_CTRL module.The CPU can configure ECC registers through the advanced high-performance bus(AHB)to implement corresponding functions.The read and write data of SRAM and Flash is processed through the ECC_CTRL module for check code generation and data error detection and correction.Simulation results demonstrate that this high-reliability storage system can detect single-bit and double-bit errors,and correct single-bit errors,thereby improving the reliability of data storage.At the same time,this circuit can lock erroneous data and addresses into registers,preventing users from accessing erroneous addresses.

关 键 词：汉明码 高可靠性 存储系统 检错纠错 

分 类 号：TN402[电子电信—微电子学与固体电子学]