STT-MRAM存储器数据保持试验方法研究  

Research on Data Retention Testing Method for STT-MRAM Memory

作　　者：杨霄垒 申浩 YANG Xiaolei;SHEN Hao(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子与封装》2024年第7期80-84,共5页Electronics & Packaging

摘　　要：自旋转移力矩磁随机存储器(STT-MRAM)的基本存储单元结构为磁性隧道结(MTJ),该单元的热稳定性会随着温度的升高而变弱。MTJ这一特性导致传统激活能计算模型无法直接应用于STT-MRAM的高温数据保持特性测试,因此研究STT-MRAM的数据保持特性需探究可替代其激活能的参数。为此,搭建了基于Xilinx Kintex-7系列FPGA的测试系统,进行了多个温度数据保持试验,最终拟合出一个代替激活能来衡量STT-MRAM数据保持能力的参数,即热稳定因子。该多温度数据拟合热稳定因子的方法可有效评估STT-MRAM器件数据保持能力。The basic storage unit structure of spin-transfer torque magnetic random access memory(STT-MRAM)is the magnetic tunnel junction(MTJ).The thermal stability of this unit weakens as the temperature increases.Due to this characteristic of the MTJ,the traditional activation energy calculation model cannot be directly applied to test the high-temperature data retention characteristics of STT-MRAM.Therefore,research on the data retention characteristics of STT-MRAM requires exploration of alternative parameters to replace the activation energy.For this purpose,a testing system based on the Xilinx Kintex-7 series FPGA is constructed to conduct data retention experiments at multiple temperatures.Ultimately,a parameter called the thermal stability factor is fitted to replace the activation energy and measure the data retention capability of STT-MRAM.This multi-temperature data fitting method of the thermal stability factor can effectively evaluate the data retention capability of STT-MRAM devices.

关 键 词：自旋转移力矩磁随机存储器 磁性隧道结 数据保持 存储器测试 

分 类 号：TN406[电子电信—微电子学与固体电子学]