基于分离多量子垒电子阻挡层的AlGaN基深紫外发光二极管  

AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

作　　者：申国文 鲁麟[1,2] 许福军 吕琛[1,2] 高文根[1,2] 代广珍 SHEN Guowen;LU Lin;XU Fujun;LYU Chen;GAO Wengen;DAI Guangzhen(Key Laboratory of Advanced Perception and Intelligent Control of High-end Equipment,Ministry of Education,Anhui Polytechnic University,Wuhu 241000,China;School of Electrical Engineering,Anhui Polytechnic University,Wuhu 241000,China;Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China)

机构地区：[1]安徽工程大学高端装备先进感知与智能控制教育部重点实验室,安徽芜湖241000 [2]安徽工程大学电气工程学院,安徽芜湖241000 [3]北京大学物理学院宽禁带半导体研究中心,北京100871

出　　处：《发光学报》2024年第7期1156-1162,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61306108);教育部留学回国人员科研启动基金(2013693);安徽工程大学拔尖人才计划(20190508)。

摘　　要：通过分离多量子垒电子阻挡层(EBL)结构,实现了AlGaN基DUV-LED器件性能的提升。由仿真结果可得,与传统的块状EBL相比,采用分离多量子垒结构的EBL可以获得更高的空穴浓度和辐射复合速率。这得益于EBL中间的夹层形成了空穴加速区,使得空穴在加速区获得能量,从而提高了空穴注入效率。另外,多量子势垒结构还能够通过提高电子势垒有效抑制电子泄漏,从而大幅度提升器件性能。综上所述,多量子垒电子阻挡层的引入可以显著提升AlGaN基DUV-LED器件的性能。Separated multiple quantum barrier electron blocking layer(EBL)have been investigated to improve the performance of AlGaN-based deep ultraviolet light-emitting diodes(DUV-LEDs)with the wavelength shorter than 250 nm.It is confirmed that the DUV-LEDs with separated multi-quantum barriers EBL contribute to a much higher hole concentration and radiative recombination rate than the conventional block EBL configuration.Due to the forma⁃tion of a hole acceleration zone by the separation interlayer in the EBL,the hole injection efficiency is significantly in⁃creased.Meanwhile,the multi-quantum barrier sample suppresses the electron leakage through raised electron barri⁃er,thus significantly improves the device performance.

关 键 词：ALGAN 深紫外发光二极管 电子阻挡层 

分 类 号：TN304.23[电子电信—物理电子学]