SOI高压LDMOS器件氧化层抗总电离剂量辐射效应研究  

Study on Total Ionizing Dose Radiation Effect of Oxide Layer in SOI High Voltage LDMOS Device

作　　者：王永维[1,2] 黄柯月 王芳 温恒娟 陈浪涛 周锌 赵永瑞[1,6] Wang Yongwei;Huang Keyue;Wang Fang;Wen Hengjuan;Chen Langtao;Zhou Xin;Zhao Yongrui(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;Beijing Advanced Semiconductor Innovation Co.,Ltd.,Beijing 101318,China;School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China;Shandong Institute for Product Quality Inspection,Jinan 250102,China;Bejing Zhenxing Institute of Metrology and Measurement,Bejing 100074,China;North-China Integrated Circuit Co.,Ltd.,Shijiazhuang 050200,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]北京国联万众半导体科技有限公司,北京101318 [3]电子科技大学集成电路科学与工程学院,成都611731 [4]山东省产品质量检验研究院,济南250102 [5]北京振兴计量测试研究所,北京100074 [6]河北新华北集成电路有限公司,石家庄050200

出　　处：《半导体技术》2024年第8期758-766,共9页Semiconductor Technology

摘　　要：绝缘体上硅(SOI)高压横向扩散金属氧化物半导体(LDMOS)器件是高压集成电路的核心器件,对其进行了总电离剂量(TID)辐射效应研究。利用仿真软件研究了器件栅氧化层、场氧化层和埋氧化层辐射陷阱电荷对电场和载流子分布的调制作用,栅氧化层辐射陷阱电荷主要作用于器件沟道区,而场氧化层和埋氧化层辐射陷阱电荷则主要作用于器件漂移区;辐射陷阱电荷在器件内部感生出的镜像电荷改变了器件原有的电场和载流子分布,从而导致器件阈值电压、击穿电压和导通电阻等参数的退化。对80 V SOI高压LDMOS器件进行了总电离剂量辐射实验,结果表明在ON态和OFF态下随着辐射剂量的增加器件性能逐步衰退,当累积辐射剂量为200 krad(Si)时,器件的击穿电压大于80 V,阈值电压漂移为0.3 V,器件抗总电离剂量辐射能力大于200 krad(Si)。The silicon on insulator(SOI)high voltage laterally diffused metal oxide semiconductor(LDMOS)device was the core device of high voltage integrated circuit,and the total ionizing dose(TID)radiation effect was studied.With the simulation software,the modulation effects of radiation trap charges of gate oxide layer,field oxide layer and buried oxide layer of the device on the electric field and carrier distribution were studied.The radiation trap charges of gate oxide layer mostly affected the channel region of devices,while radiation trap charges of field oxide layer and buried oxide layer mostly affected the drift region of devices.The image charge induced by radiation trap charge in the device changed the original electric field and carrier distribution of the device,which led to the degradation of the threshold voltage,breakdown voltage and on-resistance of the device.The total ionizing dose radiation experiment of the 80 V SOI high voltage LDMOS device was carried out.The device performances show obvious degradation with the increase of radiation dose in both ON state and OFF state.When the cumulative radiation dose reaches 200 krad(Si),the breakdown voltage of the device is higher than 80 V,the threshold voltage shift is 0.3 V,and the total ionizing dose radiation capacity of the device is greater than 200 krad(Si).

关 键 词：辐射电荷 总电离剂量(TID)辐射效应 绝缘体上硅(SOI) 横向扩散金属氧化物半导体(LDMOS) 击穿电压 导通电流 

分 类 号：TN386.1[电子电信—物理电子学] TN306