TO-3封装器件键合丝热机械可靠性与寿命预测  

Thermomechanical Reliability and Life Prediction of TO-3 Package Device Bonding Wire

作　　者：隋晓明 潘开林[1] 刘岗岗 谢炜炜 潘宇航 Sui Xiaoming;Pan Kailin;Liu Ganggang;Xie Weiwei;Pan Yuhang(School of Mechanical and Electrical Engineering,Guilin University of Electronic Technology,Guilin 541004,China;Guizhou Zhenhua Fengguang Semiconductor Co.,Ltd.,Guiyang 550018,China)

机构地区：[1]桂林电子科技大学机电工程学院,广西桂林541004 [2]贵州振华风光半导体股份有限公司,贵阳550018

出　　处：《半导体技术》2024年第8期779-784,共6页Semiconductor Technology

基　　金：电子信息材料与器件教育部工程研究中心自主研究基金(重点)项目(EIMD-AA202001);桂林电子科技大学研究生教育创新计划(2022YCXS021)。

摘　　要：为解决双芯片功率放大器的过电应力烧毁问题,对器件电路进行改进并探究其可靠性。首先,重新设计和制备基片上金属带线,并进行温度循环与拉力检测试验;然后,基于有限元方法在温度循环载荷作用下对键合丝应力应变分布情况进行了分析,并通过Coffin-Manson模型对器件的疲劳寿命进行预测分析。结果表明,高温下应力降低了3.23 MPa,低温下应力下降了97.7 MPa。改进后的器件寿命提高了11.6%,且经历过温度循环后仍满足最小键合拉力极限值要求。该研究结果可为复杂键合丝结构及寿命预测提供参考。To solve the problem of over-voltage stress burning of dual-chip power amplifiers,the device circuit was improved and its reliability was explored.First,the metal strip lines on the substrate were redesigned and prepared,and the temperature cycling and tension detection tests were conducted.Then,the stress and strain distribution of the bonding wire under the temperature cycle load was analyzed based on the finite element method,and the fatigue life of the device was predicted and analyzed using the Coffin-Manson model.The results show that the stress is reduced by 3.23 MPa at high temperature and by 97.7 MPa at low temperature.The improved device life is increased by 11.6%,and it still can meet the minimum bond pull limit requirement after temperature cycling.The research results can provide reference for complex bonding wire structure and life prediction.

关 键 词：功率器件 温度循环 ANSYS仿真 TO-3封装 键合丝 寿命预测 

分 类 号：TN405.96[电子电信—微电子学与固体电子学] TN406