氮化镓功率器件的稳态结-壳热阻测量  

Measuring Steady Junction-Case Thermal Resistance of GaN Power Devices

作　　者：赵浩 鲁金科 朱一荻 周子牛 杜伟兮 ZHAO Hao;LU Jinke;ZHU Yidi;ZHOU Ziniu;DU Weixi(School of Electrical and New Energy,China Three Gorges University,Yichang 443002,Hubei,China)

机构地区：[1]三峡大学电气与新能源学院,湖北宜昌443002

出　　处：《电气传动》2024年第7期28-31,49,共5页Electric Drive

摘　　要：器件结-壳热阻一直是功率器件备受关注的热参数,同时也是衡量功率器件散热性能的标准。为防止器件过热损坏应考虑其散热性能,因此器件热阻的精确测量尤为重要。器件热阻测量的难点在于器件的结温测量,因为在不破坏器件封装的情况下很难直接测量结温。通过实验发现:小电流下的导通电压作温敏电参数时,导通电压与温度有良好的线性度,可用于结温测量。最后在结温已知的情况下,基于热阻公式即可完成热阻测量。Junction-case thermal resistance has always been a highly concerned thermal parameter of power semiconductor devices,which is also the standard to weight the heat sink performance of power semiconductor devices.Heat-sink design should be considered in order to prevent device overheating damage.Therefore,accurate measurement of thermal resistance is particularly important for system heat-sink.The difficulty of devices thermal resistance measurement lies in the junction temperature measurement because it is difficult to measure junction temperature directly without destroying the devices package.Found through experiment that when the conduction voltage under small constant-current was used as the temperature-sensitive parameter,the conduction voltage and temperature had good linearity,which can be used for junction temperature measurement.Finally,the thermal resistance measurement can be completed based on the thermal resistance formula when the junction temperature was known.

关 键 词：GAN器件 导通电压 结温 热阻 

分 类 号：TM28[一般工业技术—材料科学与工程]