Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing  

作　　者：Siyi Huang Masao Ikeda Feng Zhang Minglong Zhang Jianjun Zhu Shuming Zhang Jianping Liu 

机构地区：[1]School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China [2]Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Journal of Semiconductors》2024年第8期67-73,共7页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(62150710548,61834008,U21A20493);the National Key Research and Development Program of China(2022YFB2802801);the Key Research and Development Program of Jiangsu Province(BE2021008-1);the Suzhou Key Laboratory of New-type Laser Display Technology(SZS2022007);the Natural Science Foundation of Jiangsu Province(BK20232042).

摘　　要：Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges.Hole concentration,resistivity and mobility were characterized by room-temperature Hall measurements.The Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the impurities.The hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature data.The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.

关 键 词：P-GAN hole concentration electrical properties ANNEALING ionization energy 

分 类 号：TN386[电子电信—物理电子学]