CdTe半导体量子点的制备及其荧光性能测定  

Preparation and Fluorescence Characterization of CdTe Semiconductor Quantum Dots

作　　者：刘建军 杨雪 张弛 赵雪钰 张志玮 陈咏梅 徐庆红 金劭 Jianjun Liu;Xue Yang;Chi Zhang;Xueyu Zhao;Zhiwei Zhang;Yongmei Chen;Qinghong Xu;Shao Jin(College of Chemistry,Beijing University of Chemical Technology,Beijing 100029,China)

机构地区：[1]北京化工大学化学学院,北京100029

出　　处：《大学化学》2024年第7期307-315,共9页University Chemistry

摘　　要：半导体量子点是一种由Ⅱ–Ⅵ族(CdSe,CdTe,CdS,ZnTe,ZnO)、Ⅲ–Ⅴ族(InAs,GaSb,InP)和Ⅳ族(Si,Ge)元素组成的纳米颗粒。目前研究较多的主要是Ⅱ–Ⅵ族的CdS、CdSe、CdTe等半导体量子点,它们具有窄带隙而表现出优异的荧光特性,这些特性是与其本征的量子尺寸效应密切相关的。本实验采用简便的水相回流法,以巯基乙酸作为保护剂,NaHTe为Te前体,在3 h的回流反应中制备出多种颜色的CdTe半导体量子点,并针对实验中出现的NaHTe转移液体过程中易被氧化的问题作出了改进,对产物的荧光性能进行了测定,最终得到了一系列量子产率达到48%的CdTe量子点。实验具有工艺简便、试剂消耗少、荧光变化明显的优点,对实验难点的改进使其具有良好的操作性与可重复性,适合拓展为本科生无机化学、仪器分析实验以及专业综合实验。Semiconductor quantum dots,composed of elements from groups II–VI(CdSe,CdTe,CdS,ZnTe,ZnO),III–V(InAs,GaSb,InP)and IV(Si,Ge),are nanoscale particles attracting significant research interest.The focus of current studies lies predominantly on II–VI group quantum dots like CdS,CdSe,and CdTe,known for their narrow band gaps and exceptional fluorescent properties intrinsically related to quantum size effects.In this study,a straightforward aqueous reflux method was employed,using thioglycolic acid as a stabilizer,and NaHTe as a Te precursor.Over a period of 3 h,CdTe semiconductor quantum dots of various colors were prepared,addressing and mitigating the issue of oxidation susceptibility during NaHTe transfer.The fluorescence luminescence properties of the product were meticulously analyzed,yielding a series of CdTe quantum dots with an impressive quantum efficiency of 48%.This experimental approach is notable for its simplicity,minimal reagent consumption,and distinct fluorescence characteristics,making it highly operable and replicable.It is well-suited for undergraduate education in inorganic chemistry,instrumental analysis,and comprehensive professional experiments.

关 键 词：半导体量子点 光致发光 荧光光谱分析法 荧光量子产率 

分 类 号：G64[文化科学—高等教育学] O6[文化科学—教育学]