SOI基横向SAMBM APD三维建模与特性研究  

Three⁃dimensional modeling and characteristic research of horizontal SAMBM APD based on SOI

作　　者：谢进 宜新博 刘景硕 崔凯月 谢海情[1,2] XIE Jin;YI Xinbo;LIU Jingshuo;CUI Kaiyue;XIE Haiqing(School of Physics and Electronic Science,Changsha University of Science and Technology,Changsha 410114,China;Hunan Provincial Key Laboratory of Genetic Engineering of Flexible Electronic Materials,Changsha University of Science and Technology,Changsha 410114,China)

机构地区：[1]长沙理工大学物理与电子科学学院,湖南长沙410114 [2]长沙理工大学柔性电子材料基因工程湖南省重点实验室,湖南长沙410114

出　　处：《电子设计工程》2024年第16期59-63,68,共6页Electronic Design Engineering

基　　金：湖南省自然科学基金(2021JJ30739);长沙市科技计划重点项目(kq1901102);湖南省教育厅科学研究项目(20K007)。

摘　　要：为更好表征器件的工作过程,为后续器件工艺制备实现提供更精确的理论支撑,采用SEN-TAURUS软件对SOI基横向多缓冲区SAM雪崩光电二极管进行三维建模仿真与特性研究。对器件的雪崩电压、光暗电流、响应度、雪崩增益、雪崩发生概率、光子探测效率以及暗计数率进行研究分析。仿真结果表明,器件雪崩电压为8.0 V,在偏置电压为4 V时,器件暗电流为5.31×10^(-16)A;当入射光波长为400 nm,光功率为0.001 W/cm^(2)时,响应度为170 A/W,增益为308.6;过偏压为1 V时,光子探测效率峰值为42.3%,暗计数率为476 Hz。In order to better characterize the working process of the device and provide more accurate theoretical support for the subsequent device process preparation and realization,3D modeling simulation and characteristic study of SOI based horizontai multi⁃buffer SAM Avalanche Photodiode were carried out by SENTAURUS software.The avalanche voltage,light and dark current,response,avalanche gain,avalanche probability,Photon Detection Efficiency and Dark Count Rate of the device are studied and analyzed.The simulation results show that the avalanche voltage is 8.0 V.When the bias voltage is 4 V,the dark current of the device is 5.31×10^(-16) A.When the wavelength of incident light is 400 nm and the optical power is 0.001 W/cm^(2),the responsivity is 170 A/W and the gain is 308.6.When the overbias voltage is 1 V,the peak Photon Detection Efficiency is 42.3%and the Dark Count Rate is 476 Hz.

关 键 词：雪崩光电二极管 三维建模 I-V特性 光子探测效率 暗计数率 

分 类 号：TN312.7[电子电信—物理电子学]