一种p-GaN HEMTs栅电荷表征方法  

Gate Charge Characterization Method for p-GaN HEMTs

作　　者：刘震 潘效飞 龚平 王燕平 叶斯灿 卢澳 闫大为 LIU Zhen;PAN Xiaofei;GONG Ping;WANG Yanping;YE Sican;LU Ao;YAN Dawei(Engineering Research Center of IOT Technology Applications of Ministry of Education,Department of Electronic Engineering,Jiangnan University,Wuxi,Jiangsu 214122,P.R.China;Wuxi Xinjian Semiconductor Technology Co.,Ltd.,Wuxi,Jiangsu 214000,P.R.China;Wuxi China Resources Micro-assembly Technology Co.,Ltd.,Wuxi,Jiangsu 214000,P.R.China)

机构地区：[1]江南大学电子工程系物联网技术应用教育部工程研究中心,江苏无锡214122 [2]无锡芯鉴半导体技术有限公司,江苏无锡214000 [3]无锡华润安盛科技有限公司,江苏无锡214000

出　　处：《微电子学》2024年第2期282-286,共5页Microelectronics

基　　金：江苏省研究生科研与实践创新计划资助项目(KYCX18_1855)。

摘　　要：与Si基金属-氧化物-半导体场效应晶体管(MOSFETs)的绝缘栅结构不同,p-GaN增强型高电子迁移率晶体管(HEMTs)的栅极结构为pn结,其在较大正向电压下处于导通状态,漏电导较大。传统栅电荷测试方法假设栅极注入电流全部存储为栅电荷,因此不适用于p-GaN HEMTs器件,否则会严重高估数值。鉴于此,基于栅电荷积累的基本过程,提出了利用动态电容法来减小漏电流影响来提取p-GaN E-HEMT的栅电荷参数。结果表明,该方法能够得到更理想的栅电荷米勒平台和特性曲线,结果更符合实际,具有重要的应用价值。Unlike the insulated gate structure of the Si-based metal-oxide-semiconductor field-effect transistors(MOSFETs),the gate of p-GaN-enhanced high electron mobility transistors(HEMTs)is a p-n junction,which is highly conductive under a large forward bias condition.The traditional method for the gate charge assumes that all current is injected and stored as gate charge.Thus,it is not applicable to p-GaN HEMT devices because the parameter values would be significantly overestimated.In this study,based on the basic accumulation process of the gate charge,we propose a dynamic capacitance method to extract the gate charge parameters of p-GaN E-HEMTs,which can reduce the impact of the forward leakage current.The capacitance method produces an ideal Miller plateau and characteristic curve,indicating significant potential for practical application.

关 键 词：p-GaN HEMTs 栅电荷 电流法 电容法 

分 类 号：TN386[电子电信—物理电子学]