Spatially selective p-type doping for constructing lateral WS_(2) p-n homojunction via low-energy nitrogen ion implantation  

作　　者：Yufan Kang Yongfeng Pei Dong He Hang Xu Mingjun Ma Jialu Yan Changzhong Jiang Wenqing Li Xiangheng Xiao 

机构地区：[1]School of Physics and Technology,Key Lab of Artificial Micro-and Nano-Structures of Ministry of Education,Wuhan University,Wuhan,China

出　　处：《Light(Science & Applications)》2024年第6期1159-1169,共11页光（科学与应用)（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (12025503,U23B2072,12074293,and 12275198);the Fundamental Research Funds for the Center Universities (2042024kf0001 and 2042023kf0196).

摘　　要：The construction of lateral p-n junctions is very important and challenging in two-dimensional(2D)semiconductor manufacturing process.Previous researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2D materials.However,interface pollution and large area scalability are challenges that are difficult to overcome with vertical stacking technology.Constructing 2D lateral p-n homojunction is an effective strategy to address these issues.Spatially selective p-type doping of 2D semiconductors is expected to construct lateral p-n homojunction.In this work,we have developed a low-energy ion implantation system that reduces the implanted energy to 300 eV.Low-energy implantation can form a shallow implantation depth,which is more suitable for modulating the electrical and optical properties of 2D materials.Hence,we utilize low-energy ion implantation to directly dope nitrogen ions into few-layer WS_(2) and successfully realize a precise regulation for WS_(2) with its conductivity type transforming from n-type to bipolar or even p-type conduction.Furthermore,the universality of this method is demonstrated by extending it to other 2D semiconductors,including WSe_(2),SnS_(2) and MoS_(2).Based on this method,a lateral WS_(2) p-n homojunction is fabricated,which exhibits significant rectification characteristics.A photodetector based on p-n junction with photovoltaic effect is also prepared,and the open circuit voltage can reach to 0.39 V.This work provides an effective way for controllable doping of 2D semiconductors.

关 键 词：IMPLANTATION DOPING Spatial 

分 类 号：O47[理学—半导体物理]