一种温度自适应硅光电倍增管偏压设计及验证  

Design and Verification of SiPM Temperature-Adaptive Bias Voltage

作　　者：刘涛 肖明 胡锐[1] LIU Tao;XIAO Ming;HU Rui(CGN Jiuyuan(Chengdu)Science and Technology Co.Ltd.,Chengdu 610041,China;Chengdu University of Technology,Chengdu 6100001,China)

机构地区：[1]中广核久源(成都)科技有限公司,成都610041 [2]成都理工大学,成都610000

出　　处：《核电子学与探测技术》2024年第3期479-485,共7页Nuclear Electronics & Detection Technology

摘　　要：本文根据SiPM击穿电压(V_(br))随温度变化的关系,结合PTC热敏电阻和低压差线性稳压器(LDO)的输入输出特性,设计了一种温度自适应硅光电倍增管偏压电路。并在-20~30℃的温度范围内分为实验组和对照组进行了电压稳定性、纹波测试、温度相关性测试和计数率测试,其中实验组为温度自适应偏压输出,对照组为固定偏压输出。测试结果表明,在设定温度范围内,实验组的过载电压变化较小,比对照组过载电压变化小1.01V,变化率由25.5%变为1.9%,计数率变化从对照组的30%变为1.6%,实验组的计数率变化呈低温度相关性,计数率在100~106次/s之间变化,而对照组计数率明显随温度上升而降低。表明使用本偏压电路时SiPM具有较好的温度稳定性。According to the relationship between SiPM breakdown voltage(V_(br))and temperature,combined with the electrical characteristics of PTC thermistor and low-dropout linear regulator(LDO),a temperature-adaptive SiPM bias circuit is designed.In the temperature range of-20~30℃,the voltage test and count rate test of this circuit were carried out in the experimental group and the control group,in which the experimental group was the temperature adaptive bias output and the control group was the fixed bias output.The result shows that in the temperature range,overload voltage change of the experimental group is 1.01 V less than the overload voltage change of the control group,the coefficient of variation changes from 25.5%to 1.9%,the change of counting rate decreases from 30%of the control group to 1.6%,The counting rate of the experimental group showed a low temperature correlation,which varied between 100~106 cps,while the counting rate of the control group decreased significantly with the increase of temperature.This shows that SiPM has good temperature stability when using this bias circuit.

关 键 词：SIPM 温度自适应 偏压 

分 类 号：TL81[核科学技术—核技术及应用]