聚倍半硅氧烷类树脂在各波长光刻技术中的研究进展  

Research Progress on Polyhedral Oligomeric Silsesquioxanes in Photolithography Technology across Various Wavelengths

作　　者：毕研刚 邹丽丽 崔淑英 徐晶 李晓珂 傅天林 王振羽 赵增武 王英杰 刘海燕 洪海哲 豆帆 BI Yan-gang;ZOU Li-li;CUI Shu-ying;XU Jing;LI Xiao-ke;FU Tian-lin;WANG Zhen-yu;ZHAO Zeng-wu;WANG Ying-jie;LIU Hai-yan;HONG Hai-zhe;DOU Fan(Yantai Shield Materials Technology Co.,Ltd.,Yantai 264006,China;Shandong Carrier Optoelectronic Technology Co.,Ltd.,Yantai 264006,China)

机构地区：[1]烟台希尔德材料科技有限公司,烟台264006 [2]山东凯瑞尔光电科技有限公司,烟台264006

出　　处：《高分子通报》2024年第8期1037-1048,共12页Polymer Bulletin

基　　金：烟台开发区科技领军人才项目(项目号2022RC003)。

摘　　要：聚倍半硅氧烷(polyhedral oligomeric silsesquioxane,简称POSS)是一类具有独特结构的有机-无机杂化聚合物材料,具有优异的透明性、力学性能、低介电性、耐热性、耐溶剂性和耐蚀刻性,在光刻胶领域具有广泛的应用。本文以光刻材料随着光刻技术加工波长的发展历程为轴,综述了POSS树脂用作可见光、近/紫外光、深紫外/真空紫外光、极紫外和电子束光刻胶材料等方面的研究进展,总结了POSS内部无机结构和外部有机链段种类对材料在不同波段应用性能的影响,分析了POSS基光刻胶的存在的问题,展望了其应用前景。Polyhedral oligomeric silsesquioxane(POSS)is a class of organic-inorganic hybrid polymer materials with a unique structure.They are widely applied in the field of photoresist due to their excellent transparency,mechanical properties,low dielectric,thermostability,solvent resistance and etching resistance.In according to the development of lithography technology,the use of POSS resin as visible light,near/ultraviolet,deep ultraviolet and extreme ultraviolet/electron beam and so on is reviewed;the influence of internal inorganic structure and external organic chain segments of POSS on their application performance in photolithography technology across various wavelengths is summed up;the problems of POSS based photoresist are analyzed and their application prospect is discussed in the end.

关 键 词：聚倍半硅氧烷 透明性 低介电性 耐蚀刻性 光刻技术 

分 类 号：TQ264.1[化学工程—有机化工] TN305.7[电子电信—物理电子学]