双极晶体管空间辐射效应的研究进展  

Advance in Space Radiation Effects of Bipolar Transistors

作　　者：韩星 王永琴 曾娅秋 刘宇[1] 粟嘉伟 林珑君 HAN Xing;WANG Yong-qin;ZENG Ya-qiu;LIU Yu;SU Jia-wei;LIN Long-jun(The 24th Research Institute of China Electronics Technology Group Corp,Chongqing 400060)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《环境技术》2024年第7期188-194,共7页Environmental Technology

基　　金：重庆市自然科学基金面上项目,项目编号:CSTB2022NSCQ-MSX1631。

摘　　要：双极晶体管具有电流驱动能力强、噪声低、线性度高等优点,已成为航天飞行器中常用的电子元器件。然而,在空间辐射环境下服役时,双极晶体管容易发生性能退化,进而危及航天设备的运行。因此,本文综述了双极晶体管在空间辐射环境中产生的损伤效应,主要包含电离损伤效应、位移损伤效应以及电离/位移损伤协同效应,并分析了双极晶体管的性能退化规律以及损伤机理,从而为双极晶体管的抗辐射研究提供一定的参考。Bipolar transistor has become the electronic component commonly used in aerospace vehicles due to their good current driving ability,low noise,good linearity and excellent matching characteristics.However,the bipolar transistor is prone to performance degradation in space radiation environment,further endangering the operation of the space equipment.In the work,the radiation damage effects of the bipolar transistor in space environment are summarized,including ionization damage,displacement damage and the irradiation synergistic effects of ionization damage and displacement damage.In the meanwhile,the performance degradation law and the damage mechanism of the bipolar transistor are analyzed.It can provide a reference for the long-term development of radiation resistance technology of bipolar transistor.

关 键 词：双极晶体管 总剂量电离辐射效应 位移损伤效应 低剂量率增强效应 电离/位移协同效应 

分 类 号：TN322.8[电子电信—物理电子学]