铂电极的电感耦合等离子体刻蚀工艺研究  

A Study on Inductively Coupled Plasma Etching Process of Platinum Electrode

作　　者：宋琳 周燕萍 左超 上村隆一郎 杨秉君 SONG Lin;ZHOU Yanping;ZUO Chao;KAMIMURA Ryuuichirou;YANG Bingjun(ULVAC Research Center Suzhou Co.,Ltd.,Suzhou,Jiangsu,215026,CHN;ULVAC,Inc.,Chigasaki,Kanagawa,253-8543,JPN)

机构地区：[1]爱发科(苏州)技术研究开发有限公司,江苏苏州215026 [2]爱发科株式会社,日本神奈川县茅崎市253-8543

出　　处：《固体电子学研究与进展》2024年第3期264-268,274,共6页Research & Progress of SSE

摘　　要：铂(Pt)金属因其特有的优良性能被广泛用作电极材料,干法刻蚀是获得器件图形的关键工艺技术,另外为了避免使用有毒性的Cl_(2),本文采用Ar/BCl_(3)作为刻蚀工艺气体,光刻胶作为刻蚀掩膜,对Pt电极材料做了干法刻蚀工艺的研究,系统地分析了电感耦合等离子体源功率、射频偏压功率、气体流量比例、工艺气压以及基板温度对刻蚀速率和刻蚀形貌的影响。得到刻蚀速率为159.7 nm/min,侧壁角度为63°,片内刻蚀速率均匀性(152.4 mm、5个点、边缘去边5 mm)为±1.75%,关键尺寸损失量小于1%的刻蚀结果。Platinum(Pt)metal has been widely used as electrode material because of its unique excellent properties.Dry etching is the key technology to manufacturing the device.In addition,to avoid using toxic Cl_(2),Ar/BCl_(3) was used as the etching process gas and photoresist was used as the etching mask.The dry etching process of Pt material was studied in this paper.Through a series of ex⁃periments,the effects of inductively coupled plasma(ICP)source power,radio frequency bias pow⁃er,gas flow ratio,process pressure and substrate temperature on the etching rate and etching profile are analyzed.The etch rate is 159.7 nm/min,the sidewall angle is 63°,the uniformity of the etch rate(152.4 mm,5 points,except edge 5mm)is±1.75%,and the loss of critical dimension amount is less than 1%.

关 键 词：电感耦合等离子体(ICP) 铂(Pt)电极 刻蚀速率 刻蚀形貌 均匀性 

分 类 号：TN305[电子电信—物理电子学]