基于硅通孔的三维微系统互联结构总剂量效应损伤机制研究  

Study on Total Ionizing Dose Effect of Three-dimensional Microsystem Interconnection Structure Based on Through-silicon Via

作　　者：王昊 陈睿 陈钱 韩建伟 于新[3] 孟德超 杨驾鹏 薛玉雄 周泉丰[4] 韩瑞龙 WANG Hao;CHEN Rui;CHEN Qian;HAN Jianwei;YU Xin;MENG Dechao;YANG Jiapeng;XUE Yuxiong;ZHOU Quanfeng;HAN Ruilong(National Space Science Center,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,China;China Academy of Engineering Physics,Mianyang 621022,China;Nanjing Electronic Devices Institute,Nanjing 210016,China;Yangzhou University,Yangzhou 225127,China)

机构地区：[1]中国科学院国家空间科学中心,北京100190 [2]中国科学院大学,北京100049 [3]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011 [4]中国工程物理研究院,四川绵阳621022 [5]南京电子器件研究所,江苏南京210016 [6]扬州大学,江苏扬州225127

出　　处：《原子能科学技术》2024年第8期1789-1796,共8页Atomic Energy Science and Technology

基　　金：国家重点研发计划(2022YFF0503603)。

摘　　要：垂直硅通孔(TSV)作为三维集成微系统的核心技术之一,可以通过多个平面层器件的垂直堆叠有效降低互联延迟,提高集成密度,减少芯片功耗。利用^(60)Co γ射线实验装置,以自主设计的基于TSV的三维互联结构作为实验对象,进行了总剂量效应敏感性分析。实验发现,随着累积辐照剂量的增加,TSV信号通道的插入损耗(S_(21))减小,回波损耗(S_(11))增大,信号传输效率不断降低。结果表明,总剂量效应诱发TSV内部寄生MOS结构产生氧化层陷阱电荷和界面态陷阱电荷导致了寄生MOS电容C-V曲线出现“负漂”现象,由此引起的信号通道特征阻抗不连续是TSV出现信号完整性问题的内在机制。基于RLGC等效电路模型,利用Keysight ADS仿真软件验证了TSV内部寄生MOS电容总剂量效应的辐射响应规律。With the development of Moore’s law,through-silicon via(TSV)has emerged as a critical technology for the realization of three-dimensional(3-D)integrated microsystem.TSV technology provides tremendous advantages,such as lower interconnect latency,higher chip integration density and fewer chip power consumption through the vertical stacking of multiple planar device layers.As a result,it profoundly satisfies the requisites of modern spacecraft for exceptional integration,miniaturisation,and multi-functionality in space operation.However,with the widespread application of 3-D integrated microsystem technology in spacecraft,there is little work available on the radiation reliability of TSV.In this paper,the total ionizing dose(TID)effect of customized TSV test chips was studied by using the irradiation of ^(60)Coγ-ray.The experimental results show that insertion loss(S_(21))decreases and return loss(S_(11))increases with the increase of cumulative dose,which demonstrates the deterioration of TSV signal integrity.Furthermore,there is a negative shift of C-V curve within TSV structure and the parasitic metal-oxide-semiconductor(MOS)capacitance within TSV structure decreases afterγ-ray irradiation.It is proposed thatγ-ray irradiation induced oxide trap charges and interface trap charges in the oxide layer,which leads to an increase in the total amount of oxide charges.Consequently,the flat-band voltage of parasitic MOS capacitance decreases and the state of parasitic MOS capacitance is transited from partial depletion to the full depletion after irradiation.This is the reason why the C-V behavior of parasitic MOS capacitance changes under ^(60)Coγ-ray irradiation.Furthermore,the decrease of parasitic MOS capacitance within TSV structure results in the variation of characteristic impedance of TSV signal channel.According to the transmission line characteristic in microwave networks,when the characteristic impedance on the transmission path is certain,the signal is not reflected.However,if the characteristic impedan

关 键 词：硅通孔 总剂量效应 寄生MOS电容 插入损耗 回波损耗 

分 类 号：TL99[核科学技术—核技术及应用] TN389[电子电信—物理电子学] V520.6[航空宇航科学与技术—人机与环境工程]