碳化硅功率二极管辐射效应测试系统的开发  

Development of Radiation Effect Testing System for Silicon Carbide Power Diode

作　　者：刘建成[1,2] 郭刚 韩金华[1,2] 刘翠翠 LIU Jiancheng;GUO Gang;HAN Jinhua;LIU Cuicui(China Institute of Atomic Energy;National Innovation Center of Radiation Application,Beijing,102413 China)

机构地区：[1]中国原子能科学研究院 [2]国家原子能机构抗辐照应用技术创新中心,北京102413

出　　处：《科技资讯》2024年第14期28-33,共6页Science & Technology Information

基　　金：中核集团青年英才项目(项目编号:11FY212306000801)。

摘　　要：为探究碳化硅功率器件抗辐照损伤能力和辐射效应机制,基于LabVIEW软件开发平台,利用Keithley公司的2410高压源表、USB-GPIB接口适配器等设备,针对两款商用碳化硅功率二极管,建立了一套辐射效应测试系统。系统在集成了Keithley 2410高压源表功能面板模拟仿真实时控制和信息同步显示的基础上,还实现了电压和电流数据的实时采集、图像化的I-V和I-t特性曲线显示及存储等功能。开发的测试系统在碳化硅功率二极管的重离子和质子辐照实验中成功应用,为今后深入开展辐射效应实验研究提供了技术保障。This paper is to explore the radiation resistance and the radiation effect mechanism of silicon carbide power devices.Based on LabVIEW software development platform,a radiation effect test system for two commercial silicon carbide power diodes was established by using 2410 high voltage source meter and USB-GPIB interface adapter of Keithley company.On the basis of integrating Keithley 2410 high-voltage source meter function panel simulation and real-time control and information synchronization display,the system also realizes the real-time acquisition of voltage and current data,the display and storage of graphical I-V and I-t characteristic curves,and other functions.The developed testing system has been successfully applied in the heavy ion and proton radiation experiments of silicon carbide power diodes,providing technical support for further research on radiation effect experiments in the future.

关 键 词：碳化硅功率二极管 辐射效应 单粒子烧毁 测试系统 

分 类 号：TN313.4[电子电信—物理电子学]