Al掺杂对β-Ga_(2)O_(3)薄膜光学性质的影响研究  

Effect of Al Doping on the Optical Properties of β-Ga_(2)O_(3) Thin Films

作　　者：钟琼丽 王绪 马奎 杨发顺 ZHONG Qiongli;WANG Xu;MA Kui;YANG Fashun(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Nano-Electronics of Guizhou Province,Guiyang 550025,China;Semiconductor Power Device Reliability Engineering Research Center of Ministry of Education,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵阳550025 [3]半导体功率器件可靠性教育部工程研究中心,贵阳550025

出　　处：《人工晶体学报》2024年第8期1352-1360,共9页Journal of Synthetic Crystals

基　　金：半导体功率器件可靠性教育部工程研究中心开放基金项目(ERCME-KFJJ2019-(01))。

摘　　要：近年来,半导体器件向着高散热性、高击穿场强和低能耗的方向发展,因此超宽禁带半导体材料β-Ga_(2)O_(3)具有广阔的应用前景,而有效掺杂是实现β-Ga_(2)O_(3)器件的基础。实验采用磁控溅射法制备Ga_(2)O_(3)/Al/Ga_(2)O_(3)/Al/Ga_(2)O_(3)复合结构,经高温退火使Al原子热扩散进入薄膜中,形成Al掺杂的β-Ga_(2)O_(3)薄膜。采用激光区熔法使薄膜区域熔化再结晶,进一步提升掺杂质量。对Al掺杂β-Ga_(2)O_(3)薄膜的晶体性质、杂质含量及光学性质进行了测试表征。结果表明:Al掺杂不改变β-Ga_(2)O_(3)薄膜的晶体结构;随着Al层溅射时间延长,掺杂含量逐渐增加;当Al溅射时间为5和10 s时,薄膜紫外吸收率分别为40%和50%;随着Al溅射时间的增加,Al掺杂β-Ga_(2)O_(3)薄膜紫外区域光吸收率逐渐增强,Al溅射时间为300 s时,β-Ga_(2)O_(3)薄膜的光吸收率接近90%;低浓度的Al掺杂会导致β-Ga_(2)O_(3)薄膜的禁带宽度变窄。In recent years,semiconductor devices are developing towards high heat dissipation,high breakdown field strength and low energy consumption,so the ultra-wide band semiconductor materialβ-Ga_(2)O_(3) has a broad application prospect.However,effective doping is the basis for realizing β-Ga_(2)O_(3) devices.In this paper,Ga_(2)O_(3)/Al/Ga_(2)O_(3)/Al/Ga_(2)O_(3) composite structure is experimentally prepared by magnetron sputtering,and the Al atoms are thermally diffused into the film by hightemperature annealing at the same time,so as to form Al-dopedβ-Ga_(2)O_(3) thin film.Then,the laser zone melting method was used to melt and recrystallize the film area to further enhance the doping quality.The Al-dopedβ-Ga_(2)O_(3) thin films were tested and characterized in terms of crystal properties,impurity content and optical properties.The experimental results show that:Al doping basically does not change the crystal structure ofβ-Ga_(2)O_(3) thin films;the impurity content is gradually enhanced as the sputtering time of the Al layer becomes longer;in terms of the optical properties,the ultraviolet(UV)absorptivity of the films is 40%and 50%when the Al sputtering time is 5 and 10 s,and the UV absorption of the Al-dopedβ-Ga_(2)O_(3) thin films is gradually enhanced with the increase of Al sputtering time;the light absorption ofβ-Ga_(2)O_(3) thin film is close to 90%when the Al sputtering time is 300 s;and the low concentration of Al doping leads to the narrowing of the band gap width ofβ-Ga_(2)O_(3) thin film.

关 键 词：β-Ga_(2)O_(3)薄膜 AL掺杂 磁控溅射 Ga_(2)O_(3)/Al/Ga_(2)O_(3)/Al/Ga_(2)O_(3)复合结构 光吸收 光学带隙 

分 类 号：TN304.055[电子电信—物理电子学]